We present a novel absorber material—NaSbS2—for solar cells. NaSbS2 is formed as an unexpected byproduct in the chemical synthesis of Sb2S3. However, NaSbS2 has many attractive features for a solar material. Here single phase NaSbS2 nanoparticles were synthesized through solution processing. NaSbS2 semiconductor-sensitized solar cells were demonstrated for the first time. The best cell yielded Jsc = 10.76 mA/cm2, Voc = 0.44 V, FF = 48.6%, and efficiency η = 2.30% under 1 sun. At the reduced 0.1 sun, the η increased to 3.18%—a respectable η for a new solar material.
ZnO and Li‐doped ZnO photocatalysts were prepared by using a solvothermal method, aided by a supercritical drying technique. The structure and morphology of the photocatalysts were investigated by using SEM, X‐ray diffraction (XRD), UV/Vis and Raman spectroscopy. The photocatalytic activity and selectivity were investigated in the aqueous‐phase photodegradation of methylene blue and phenol as model reactions. Herein, it is reported for the first time that Li doping can lead to significant deactivation of the photocatalytic activity (i.e., decreased oxidization capability) of ZnO materials. The distribution of intermediate products (i.e., selectivity) was also significantly modified in the decomposition of phenol catalyzed by Li‐doped ZnO compared to that catalyzed by ZnO. Photoluminescence (PL) and soft X‐ray absorption spectroscopy (XAS) studies suggested that dopant‐induced surface‐defect states acted as electron–hole combination centers and changed the adsorbate/surface binding, thus causing the deactivation of photocatalytic activity and altering the photocatalytic selectivity in Li‐doped ZnO materials.
We present a new ternary semiconductor absorber material -Ag 3 SbS 3 -for solar cells. Ag 3 SbS 3 nanoparticles were grown on mesoporous TiO 2 electrodes using a two-stage successive ionic layer adsorption reaction process. Post annealing transformed the double-layered structure into the Ag 3 SbS 3 phase. The energy gap of the synthesized Ag 3 SbS 3 nanoparticles is estimated to be ∼1.5-1.7 eV. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized nanoparticles using a polysulfide electrolyte. The best cell yielded a short-circuit current density J sc of 11.47 mA/cm 2 , an open-circuit voltage V oc of 0.33 V, a fill factor FF of 38.92%, and a power conversion efficiency η of 1.47% under 1 sun. The external quantum efficiency (EQE) spectrum covered the spectral range of 300-850 nm with a maximal EQE = 80% at λ = 500 nm. At the reduced light intensity of 13% sun, the η increased to 2.18% with J sc = 2.46 mA/cm 2 (which could be normalized to 18.9 mA/cm 2 ). The respectable photovoltaic performance indicates that Ag 3 SbS 3 could be a potential solar absorber material. Semiconductor-sensitized solar cells (SSSCs) have drawn a great deal of attention due to their potential application as a low-cost alternative to Si-based photovoltaic sources. The key component of an SSSC is a mesoporous oxide nanoparticles (usually TiO 2 ) coated with a layer of nanostructured light-absorbing semiconductor. An electrolyte is filled into the porous space of the TiO 2 electrode to complete the charge redox process. Depending on the electrolyte, SSSCs can be classified into two types: solid-state SSSCs (also referred to as extremely thin absorber solar cell-ETA) or liquid-junction SSSCs. The most widely used semiconductor absorber materials are the binary metal chalcolgenides such as CdS, CdSe, PbS, Ag 2 S, Sb 2 S 3 , etc.1-5 These nanostructured semiconductor sensitizers have several advantages including (1) tunable absorption range due to the quantumsize effect, 6 (2) large optical absorption coefficient, 7 and (3) multiple electron-hole pairs produced by a single photon. 8 The highest efficiencies achieved for single-layered binary metal chalcogenide sensitizers are ∼5-7%.9-12 Slightly better efficiencies can be obtained for double-layered core-shell binary sensitizers. [13][14][15] In contrast to binary sensitizers, ternary semiconductors are a relatively unexplored subject. Ternary semiconductors are more difficult to synthesize because there are three elements involved and the stoichiometry must be correct. There are several advantages for ternary semiconductor sensitizers: (1) the energy gap E g can be tuned by varying the ratio among the three elements, (2) large optical absorption coefficients near 10 4 -10 5 cm −1 , and (3) many ternary semiconductors have E g near the optimal E g ∼ 1.4 eV for an optimal solar absorber. 16 However, only a small number of ternary semiconductors, such as CuSbS 2 , Pb-Sb-S, AgInS 2 , AgBiS 2 etc., have been employed as solar absorbers in SSSCs to date (the wi...
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.
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