High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

“…The CdS detector has no infrared response inherently, whereas currently it only works as a photocon-ductor and seems hard to reach high performance and high speed. Some other wide bandgap II-VI, SiC and III-V nitrides have also attracted much attention in those bands (e. g. Ando Chang et al 2006) have been adopted. However, their responses are mainly restricted in the UV side, and the tailoring of the response width is difficult.…”

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

“…Several developments such as AlGaN/GaN metal-insulator-semiconductor PDs, AlGaN on Si inverted Schottky PDs and inverted AlGaN/GaN UV p-i-n PDs are demonstrated in this direction but most of them suffered from performance limitation especially low photoresponsivity. [9][10][11] To facilitate further progress, it is vital to develop high responsivity PDs with inherent gain for detecting very low level light signal. Although, MSM PDs can exhibit internal gain that provides high responsivity, it is a slow process.…”

M-S and M-O-S contacts to N-polar GaN on silicon (111) for UV photodetector application

“…A crucial impact on UV detection performance is given by the quality of the metal-semiconductor contacts as the detector dark current depends on the Schottky barrier height. In this respect, it was shown that the deposition of an additional thin oxide layer between metal and semiconductor and creating thus M-O-S contacts provides a viable way to increase sensitivity by improving the dark to photocurrent ratio [1,2]. The use of virtual GaN substrates on silicon is targeted in addition to improve yield and thus economical profit in case of mass production of GaN based UV devices.…”