A critical challenge for the convergence of optics and electronics is that the micrometre scale of optics is significantly larger than the nanometre scale of modern electronic devices. In the conversion from photons to electrons by photodetectors, this size incompatibility often leads to substantial penalties in power dissipation, area, latency and noise [1][2][3][4] . A photodetector can be made smaller by using a subwavelength active region; however, this can result in very low responsivity because of the diffraction limit of the light. Here we exploit the idea of a half-wave Hertz dipole antenna (length 380 nm) from radio waves, but at near-infrared wavelengths (length 1.3 mm), to concentrate radiation into a nanometre-scale germanium photodetector. This gives a polarization contrast of a factor of 20 in the resulting photocurrent in the subwavelength germanium element, which has an active volume of 0.00072 mm 3 , a size that is two orders of magnitude smaller than previously demonstrated detectors at such wavelengths.The interaction of light with nanostructured metals has been studied extensively in recent years [5][6][7][8][9][10] . The resulting near-field optical intensity can be two to three orders of magnitude higher than the incident intensity. However, very little research has been carried out into the interaction of these strong near fields with semiconductors and the further transformation of the optical energy into electricity [11][12][13] . It has recently been demonstrated that the photogeneration of carriers in silicon can be enhanced by a surface-plasmon antenna at a wavelength of 840 nm (ref. 12). This method has the practical limitation that the entire grating structure necessary for exciting a surface-plasmon resonance occupies a large area in terms of wavelengths. Alternatively, a C-shaped aperture has been used to enhance photodetection locally without exciting long-range surface-plasmon resonances 13 . However, for easy integration and high-speed, low-capacitance operation, it is generally advantageous to design planar devices such as the metal -semiconductor-metal (MSM) detectors that are widely used in high-speed optical receivers 14 .Resonant antennas can confine strong optical near fields in a subwavelength volume, as demonstrated recently for bow-tie antennas and dipole antennas at visible wavelengths using the resulting scattered light 15,16 . The optical properties of the structures largely depend on the size and shape of the antennas.

The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1−xN thin films with low impurity concentrations.

Abstract-Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D it ) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D it dependency on growth conditions was studied. Minimum D it of of 3x10 11 cm -2 V -1 was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D it is strongly affected by the distribution of oxidation states and quality of the suboxide.

Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed.

A large-area superhydrophobic and omnidirectional antireflective nanostructured organically modified silica coating has been designed and prepared. The coating mimics the self-cleaning property of superhydrophobic lotus leaves and omnidirectional broad band antireflectivity of moth compound eyes, simultaneously. Water contact and sliding angles of the coating are around 160°and 10°, respectively. Coating improves the transmittance of the glass substrate around 4%, when coated on a single side of a glass, in visible and near-infrared region at normal incidence angles. At oblique incidence angles (up to 60°) improvement in transmission reaches to around 8%. In addition, coatings are mechanically stable against impact of water droplets from considerable heights. We believe that our inexpensive and durable multifunctional coatings are suitable for stepping out of the laboratory to practical outdoor applications.

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications.

We present a C-shaped nanoaperture-enhanced Ge photodetector that shows 2-5 times the photocurrent enhancement over that from a square aperture of the same area at 1310 nm wavelength. We demonstrate the polarization dependence of the C-aperture photodetector over a wide wavelength range. Our experimental observation agrees well with finite-difference time-domain simulation results.

Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.