Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Zhang, Yonggang; Gu, Yan

doi:10.5772/50404

Cited by 3 publications

(3 citation statements)

References 33 publications

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“…In the absorption spectrum, one peak between 3.5 and 4.0 eV can be observed, with a similar shape than the one usually reported for GaP, indicating that the absorption spectrum mainly comes from the In-poor phase. However, the absorption curve starts from the high energy side of the PL around 2.1 eV, which is smaller than the expected band gap of the In-poor phase In 0.18 GaP at low temperature (which should be around 2.32 eV) . This absorption tail can result from the alloy fluctuation of the InGaP matrix or another part of the material with a lower band gap ( i.e.…”

Section: Results and Discussionmentioning

confidence: 89%

“…However, the absorption curve starts from the high energy side of the PL around 2.1 eV, which is smaller than the expected band gap of the In-poor phase In 0.18 GaP at low temperature (which should be around 2.32 eV). 28 This absorption tail can result from the alloy fluctuation of the InGaP matrix or another part of the material with a lower band gap (i.e., the In-rich phase with the APB singularity).…”

Section: Resultsmentioning

confidence: 99%

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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, (APB)) in an (In, Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified, by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first principles methods, leading to the prediction of a type II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of electron-phonon interaction to 2D vertically buried III-V homovalent nanoobjects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon and device applications with weakly polar semiconductors.

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Section: Results and Discussionmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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“…Broad wavelength tuning range, as well as In0.49Ga0.51P/GaAs wider bandgap hetero system, supported the important applications of this quaternary including LD and PD of longer wavelength for fiber communication and shorter wavelength for optical disc, as well as hetero-junction bipolar transistor (HBT). Exploration and practice had been made based on those arsenide and phosphide for a variety of devices in recent decades [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] , resulting in fruitful results. Based on the binaries above in conjunction with related ternaries and quaternaries, a III-V compound containing five elements of Al, Ga, In and As, P could be constructed, but in fact it is the alloy of six binaries, or known as quasihexahydric inherit and develop characteristics of the binaries.…”

Section: Arsenide and Phosphidementioning

confidence: 99%

The magic of III-Vs

Zhang

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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III-V compound semiconductors have abundant features for various electronic, optoelectronic and photonic applications, all arise from variform magic combination of group III and group V elements formed binaries, resulting in ever-changing characteristics. In this paper, diversified ternaries, quaternaries and quinaries are presented geometrically based on the binaries of arsenide, phosphide and antimonide, mainly concerned of their bandgap, lattice constant and the lattice match domain on different substrates. The features of nitride and dilute nitride, bismide and dilute bismuth, as well as boride, are also discussed briefly. An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development, along with many challenges.

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Visible Light Communication Receiving Technology

Chi

2018

LED-Based Visible Light Communications

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We propose a method that uses inaudible ultrasonic waves to address the issue of uplink transmission in visible light communication. Our scheme, which applies frequency-shift keying modulation and receive beamforming by a microphone array, has been experimentally confirmed. This system has an adjustable receiving direction to enhance the anti-interference ability of uplink transmission, and it meets the asymmetric requirements of uplink and downlink service bandwidth for Internet services.

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Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Cited by 3 publications

References 33 publications

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

The magic of III-Vs

Visible Light Communication Receiving Technology

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