Abstract:High-throughput high-density mapping of gate length variations using static random-access memory (SRAM) as electronic test structures is reported. In the experiments, direct measurements of bit-line currents revealed the individual transistor gate length variations within every memory cell. With SRAM and its fast addressing circuits we can measure CD variations with measurement time as fast as 5 s per data point and spatial periodicities down to 6 m. Layout-dependent periodic errors were found to take up 30% t… Show more
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