No abstract

Owing to its good air stability and high refractive index, two-dimensional (2D) noble metal dichalcogenide shows intriguing potential for versatile flat optics applications. However, light field manipulation at the atomic scale is conventionally considered unattainable because the small thickness and intrinsic losses of 2D materials completely suppress both resonances and phase accumulation effects. Here, we demonstrate that losses of structured atomically thick PtSe2 films integrated on top of a uniform substrate can be utilized to create the spots of critical coupling, enabling singular phase behaviors with a remarkable π phase jump. This finding enables the experimental demonstration of atomically thick binary meta-optics that allows an angle-robust and high unit thickness diffraction efficiency of 0.96%/nm in visible frequencies (given its thickness of merely 4.3 nm). Our results unlock the potential of a new class of 2D flat optics for light field manipulation at an atomic thickness.

The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of I ON. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs. V

No abstract

No abstract

Nonscattering optical anapole condition is corresponding to the excitation of radiationless field distributions in open resonators, which offers new degrees of freedom for tailoring light-matter interaction. Conventional mechanisms for achieving such a condition relies on sophisticated manipulation of electromagnetic multipolar moments of all orders to guarantee superpositions of suppressed moment strengths at the same wavelength. In contrast, here we report on the excitation of optical radiationless anapole hidden in a resonant state of a Si nanoparticle utilizing a tightly focused radially polarized (RP) beam. The coexistence of magnetic resonant state and anapole condition at the same wavelength further enables the triggering of resonant state by a tightly focused azimuthally polarized (AP) beam whose corresponding electric multipole coefficient could be zero. As a result, high contrast inter-transition between radiationless anapole condition and ideal magnetic resonant scattering can be achieved experimentally in visible spectrum. The proposed mechanism is general which can be realized in different types of nanostructures. Our results showcase that the unique combination of structured light and structured Mie resonances could provide new degrees of freedom for tailoring light-matter interaction, which might shed new light on functional meta-optics.

Articles you may be interested inIntegrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement Appl. Phys. Lett. 86, 064104 (2005); 10.1063/1.1863444Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique Practical approach to separating the pattern generator-induced mask CD errors from the blank/process-induced mask CD errors using conventional market measurements Critical dimension ͑CD͒ errors are traditionally specified and characterized without reference to their spatial frequency spectra. However, a given amplitude of CD variation can have very different consequences depending on its spectrum. CD errors whose variation is over a few micrometers can be much more serious than those of the same magnitude that extend over several chips. Existing CD metrology tools, such as scanning electron microscopy or electrical resistance measurements, are seldom used to characterize these short-range CD variations, particularly those with spatial wavelengths below 100 m, because of the large amount of data required and the difficulty of collecting data in such a dense grid. We report a new method of measuring CD variations using static random-access memory ͑SRAM͒ circuits in which direct measurements of bit-line currents reveal the individual transistor gate length variations within each memory cell. With the compactness and regularity of the SRAM layout we can measure CD variations with spatial periodicities down to 6 m. By repeatedly measuring each cell in a memory chip and recording the corresponding currents we can achieve sufficient data to minimize noise, and through two-dimensional bandpass filtering 0.2 nm CD variations can be detected. Two designs of 4 Mbit SRAMs fabricated using 250 nm design rules were studied. The resulting CD variations yielded spectra that were dominated by peaks whose origins included uncorrected electron beam and optical proximity effects. Pattern-independent variations ascribable to the reticle generator itself appeared to contribute only a small fraction of the total error observed.

The combination of multiplexing among multiple physical dimensions and multilevel coding simultaneously can boost the capacity of ODS.