High temperature oxidation behavior of SiC coating in TRISO coated particles

Liu, Rongzheng; Liu, Bing; Zhang, Kaihong; Liu, Malin; Shao, Youlin; Tang, Chunhe

doi:10.1016/j.jnucmat.2014.06.055

Cited by 65 publications

(28 citation statements)

References 23 publications

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“…The 6S than contain only 6H-SiC indi-cate the oxidation at high temperature its weight changes were significantly influenced by other phases that formed during oxidation. The oxide phases were formed slowly below 1200 o C [11] . At 1400 o C the oxide layer in the surface of SiC already reached saturation where there no more emission of Si and C atoms from the surface of SiC or internal of oxide layer.…”

Section: Resultsmentioning

confidence: 99%

“…A face terminated oxidation behavior on 4H-SiC has been observed which indicates that the oxidation growth rate on C-face is faster than on Si face [10] . The oxide layer thickness increased slowly below 1200 o C and rapidly when the temperatures are higher than 1500 o C [11] . This term oxidation process can use as film growth on SiC surface that applicable in electronic devices [12] .…”

Section: Introductionmentioning

confidence: 95%

“…However postulated accidents in which a primary coolant pipe is ruptured, air invades the reactor core. The fuel sphere might be exposed to air [11] . Furthermore, the oxidation results obtained can also provide information of SiC phase changes during oxidation.…”

Section: Introductionmentioning

confidence: 99%

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Phase Changes on 4h and 6h Sic at High Temperature Oxidation

Setiawan

Suryaman

Masrukan

2016

urania

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PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION.The oxidation on two silicon carbide contain 6H phase and contains 6H and 4H phases has been done. Silicon carbide is ceramic non-oxide with excellent properties that potentially used in industry. Silicon carbide is used in nuclear industry as structure material that developed as light water reactor (LWR) fuel cladding and as a coating layer in the high temperature gas-cooled reactor (HTGR) fuel. In this study silicon carbide oxidation simulation take place in case the accident in primary cooling pipe is ruptured. Sample silicon carbide made of powder that pressed into pellet with diameter 12.7 mm and thickness 1.0 mm, then oxidized at temperature 1000 o C, 1200 o C dan 1400 o C for 1 hour. The samples were weighted before and after oxidized. X-ray diffraction conducted to the samples using Panalytical Empyrean diffractometer with Cu as X-ray source. Diffraction pattern analysis has been done using General Structure Analysis System (GSAS) software. This software was resulting the lattice parameter changes and content of SiC phases. The result showed all of the oxidation samples undergoes weight gain. The 6S samples showed the highest weight change at oxidation temperature 1200 o C, for the 46S samples showed increasing tendency with the oxidation temperature. X-ray diffraction pattern analysis showed the 6S samples contain dominan phase 6H-SiC that matched to ICSD 98-001-5325 card. Diffraction pattern on 6S showed lattice parameter, composition and crystallite size changes. Lattice parameters changes had smaller tendency from the model and before oxidation. However, the lowest silicon carbide composition or the highest converted into other phases up to 66.85 %, occurred at oxidation temperature 1200 o C. The 46S samples contains two polytypes silicon carbide. The 6H-SiC phases matched by ICSD 98-016-4972 card and 4H-SiC phase matched by ICSD 98-016-4971 card. Diffraction pattern on 46S also showed lattice parameter, composition and crystallite size changes. The lattice parameter changes not significant. For 6S and 46S samples at 1400 o C, the 6H-SiC phase changes into other phases more than 50 % from its original weight percentage.Keywords: silicon carbide, 4H-SiC, 6H-SiC, oxidation, high temperature. oksidasi, temperatur tinggi.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

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Phase Changes on 4h and 6h Sic at High Temperature Oxidation

Setiawan

Suryaman

Masrukan

2016

urania

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“…Furthermore, the SiC layers on spherical substrates exhibited different microstructure from that of the bulk SiC . Some researchers have reported high‐temperature oxidation behavior of TRISO particles in air or oxygen . Recently, the oxidation of the SiC layer in TRISO particles in flowing steam environments at 1737‐1973 K was also studied .…”

Section: Introductionmentioning

confidence: 99%

Effects of water vapor on the oxidation and the fracture strength of SiC layer in TRISO fuel particles

Cao

Hao

Wang³

et al. 2017

J Am Ceram Soc

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Steam oxidation of silicon carbide (SiC) layer in nuclear fuel particles were performed in flowing argon‐water vapor mixture with a total pressure of 1 bar at 1173‐1673 K. Both the phase composition and the microstructure of the oxide scale on the SiC layer varied with the oxidation temperature. Reaction rates of water vapor with the SiC layer were determined by measuring the oxide scale thickness. It was found that the oxidation of SiC layer follows the parabolic law. The activation energy was calculated to be 103±11 kJ/mol. It is proposed that the rate determine step of the oxidation is the diffusion of water vapor molecules in the oxide scale. The fracture strength of SiC shell after steam oxidation was evaluated using a crush test. The fracture strength decreased with the increase in the oxidation temperature due to the thinning of the SiC layer.

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“…The TRISO particle properties are ones of the most important factors in determining the radiological safety of HTGR. This is because retained fission products in the fuel, fuel burnup and temperature that can be tolerated in the reactor core are mainly determined by the properties of the TRISO fuel particles [1,[7][8][9][10][11][12] .…”

Section: Introductionmentioning

confidence: 99%

Estimation of Routine Discharge of Radionuclides on Power Reactor Experimental Rde

Udiyani

Kuntjoro

2017

urania

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ESTIMATION OF ROUTINE DISCHARGE OF RADIONUCLIDES ON POWER REACTOR EXPERIMENTAL RDE.Experimental power reactor (RDE), which is planned to be constructed by BATAN, is a kind of High Temperature Gas Cooled Reactor (HTGR) with 10 MWth power. HTGR is a helium gas-cooled reactor with TRISO-coated fuel that is able to confine fission products to be remained in the core. To ensure the safety for workers and public surroundings of the RDE site and to meet the regulatory body requirements for construction and operation, research is needed for environmental radiation in normal and abnormal condition. This study is focused on normal operating condition, while for the accident condition study will be carried out after the final design has been completed. Estimation of radiology in the environment involves the source term released into the environment under routine operation condition. The purpose of this study is to estimate the source terms released into the environment based on postulation of normal or routine operation of the RDE-10 MWth. The research approach starts with an assumption that there are defects and impurities in the TRISO fuel because of limitations during the fabrication. Mechanisms of fission products release from the fuel to the environment were created based on the safety features design of RDE. Radionuclides inventories in the reactor were calculated by the use of ORIGEN-2 whose library has been modified for HTGR type, while assumptions on TRISO fuel defects and release fraction for each compartment of the RDE safety systems are defined by a reference parameter. The results show that the important source terms of RDE are group of noble gases (Kr and Xe), halogen (I), Sr, Cs, H-3, and Ag. Activities of RDE source terms for routine operations have no significant difference with the HTR-10 source terms with the same power.Keywords: Routine discharge, radionuclide, source terms, RDE, HTGR.

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High temperature oxidation behavior of SiC coating in TRISO coated particles

Cited by 65 publications

References 23 publications

Phase Changes on 4h and 6h Sic at High Temperature Oxidation

Phase Changes on 4h and 6h Sic at High Temperature Oxidation

Effects of water vapor on the oxidation and the fracture strength of SiC layer in TRISO fuel particles

Estimation of Routine Discharge of Radionuclides on Power Reactor Experimental Rde

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