High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Sharma, Yogesh; Li, Fan; Jennings, Michael R.; Fisher, C; Pérez‐Tomás, Amador; Thomas, S.; Hamilton, Dean P.; Russell, Stephen A. O.; Mawby, P.A.

doi:10.1007/s11664-015-3949-4

Cited by 16 publications

(20 citation statements)

References 21 publications

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“…In the last ten years, there have been many improvements in 3C-SiC substrate preparation [18][19][20][21][22][23][24] that a defect density below 400 cm -1 became possible [24]. There were also further developments in 3C-SiC device processing, including implantation [25,26], oxidation [27][28][29], and metallisation [30,31]. 600 V vertical power MOSFET was demonstrated with a specific on-resistance of 8.2 mΩ.cm 2 [32].…”

Section: Introductionmentioning

confidence: 99%

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Mawby

Qiu

et al. 2020

IEEE Trans. Electron Devices

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Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO2 layers on 3C-SiC, which is crucial in power MOS device developments. This paper presents a comprehensive study of the medium and long-term time-dependent dielectric breakdown (TDDB) of 65 nm thick SiO2 layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. Fowler-Nordheim (F-N) tunnelling is observed above 7 MV/cm and an effective barrier height of 3.7 eV is obtained, which is highest known for native SiO2 layers grown on the semiconductor substrate. The observed dependence of the oxide reliability on the gate active area suggests the oxide quality has not reached the intrinsic level. Three failure mechanisms were identified, confirmed by both medium and long-term results. Whereas two of them are likely due to extrinsic defects from material quality and fabrication steps, the one dominating the high field (>8.5 MV/cm) should be attributed to the electron impact ionization within SiO2. At room temperature, the field acceleration factor is found to be ≈0.906 dec/ (MV/cm) for high fields, and the projected lifetime exceeds 10 years at 4.5 MV/cm.

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Section: Introductionmentioning

confidence: 99%

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Mawby

Qiu

et al. 2020

IEEE Trans. Electron Devices

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“…We can see with the increase of temperature from 1200 to 1500°C that D it reduces from 2 × 10 12 to 5 × 10 11 cm Figure 15(b) shows the linear transfer characteristics and field-effect mobilities of the devices measured at room temperature [36]. The V T values for the devices without any passivation are typically around 5 [3,49] which is due to the large number of traps at the interface. The net charge of these traps is negative in nature.…”

Section: High-temperature Oxidationmentioning

confidence: 95%

“…The area under the conductance peak is a measure for D it . The position of the peak corresponds to the energy position in the band gap and as all these peaks occur at gate bias close to V FB , it can be inferred that these peaks are a measure of D it close to the CB edge of 3C-SiC [49]. Devices without the N 2 O post-oxidation annealing have larger area under G-V curves when compared with the annealed device, implying higher D it for non-annealed devices.…”

Section: High-temperature Dry/thermal Oxidation (1200-1400°c) and N 2mentioning

confidence: 95%

“…For example, as we go from thermally grown gate oxide to post-oxidation-annealed (passivated) oxide using hydrogen (H 2 ) passivation, NO/N 2 O passivation, nitrogen plasma (N-plasma) passivation or phosphorous (P) passivation, D it decreases significantly [37,[46][47][48]. Thomas et al have shown that as-grown oxidized at 1500°C resulted in a 4H-SiC MOSFET with maximum field-effect mobility of 40 cm 2 /V s. Sharma et al have studied high-temperature oxidation of 3C-SiC [49]. In that work, the highest temperature used for the oxidation of 3C-SiC is 1400°C, because of the limit dictated by the melting point of Si (1414°C).…”

Section: High-temperature Dry/thermal Oxidation (1200-1400°c) and N 2mentioning

confidence: 99%

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Advanced SiC/Oxide Interface Passivation

Sharma¹

2017

New Research on Silicon - Structure, Properties, Technology

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To save energy on an electric power grid, the idea of redesigned 'micro-grids' has been proposed. Implementation of this concept needs power devices that can operate at higher switching speeds and block voltages of up to 20 kV. Out of SiC and GaN wide band gap semiconductors, the former is more suitable for low-as well as high-voltage ranges. SiC exists in different polytypes 3C-, 4H-and 6H-. 4H-SiC due to its wider band gap, 3.26 eV has higher critical electric field of breakdown (E c ) and electron bulk mobility compared to 6H-SiC. Even with all these benefits 4H-SiC full potential has not yet been realized. This is due to high trap densities (D it ) at the interface. In addition to 4H-polytype, in recent years, there is a reignited interest on cubic silicon carbide (3C-SiC), which can be potentially grown heteroepitaxially on 12″ Si substrates, as it would result in a drastic cost reduction of semiconductor devices compared to the successful but exorbitantly expensive SiC hexagonal polytype technology (4H-SiC). In this chapter, we discuss and summarize all different interface passivation techniques or processes that have led to a vast improvement of these (4H-or 3C-SiC/SiO 2 ) interfaces electrically.

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“…The oxide layer thickness increased slowly below 1200 o C and rapidly when the temperatures are higher than 1500 o C [11] . This term oxidation process can use as film growth on SiC surface that applicable in electronic devices [12] .…”

Section: Introductionmentioning

confidence: 99%

Phase Changes on 4h and 6h Sic at High Temperature Oxidation

Setiawan

Suryaman

Masrukan

2016

urania

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PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION.The oxidation on two silicon carbide contain 6H phase and contains 6H and 4H phases has been done. Silicon carbide is ceramic non-oxide with excellent properties that potentially used in industry. Silicon carbide is used in nuclear industry as structure material that developed as light water reactor (LWR) fuel cladding and as a coating layer in the high temperature gas-cooled reactor (HTGR) fuel. In this study silicon carbide oxidation simulation take place in case the accident in primary cooling pipe is ruptured. Sample silicon carbide made of powder that pressed into pellet with diameter 12.7 mm and thickness 1.0 mm, then oxidized at temperature 1000 o C, 1200 o C dan 1400 o C for 1 hour. The samples were weighted before and after oxidized. X-ray diffraction conducted to the samples using Panalytical Empyrean diffractometer with Cu as X-ray source. Diffraction pattern analysis has been done using General Structure Analysis System (GSAS) software. This software was resulting the lattice parameter changes and content of SiC phases. The result showed all of the oxidation samples undergoes weight gain. The 6S samples showed the highest weight change at oxidation temperature 1200 o C, for the 46S samples showed increasing tendency with the oxidation temperature. X-ray diffraction pattern analysis showed the 6S samples contain dominan phase 6H-SiC that matched to ICSD 98-001-5325 card. Diffraction pattern on 6S showed lattice parameter, composition and crystallite size changes. Lattice parameters changes had smaller tendency from the model and before oxidation. However, the lowest silicon carbide composition or the highest converted into other phases up to 66.85 %, occurred at oxidation temperature 1200 o C. The 46S samples contains two polytypes silicon carbide. The 6H-SiC phases matched by ICSD 98-016-4972 card and 4H-SiC phase matched by ICSD 98-016-4971 card. Diffraction pattern on 46S also showed lattice parameter, composition and crystallite size changes. The lattice parameter changes not significant. For 6S and 46S samples at 1400 o C, the 6H-SiC phase changes into other phases more than 50 % from its original weight percentage.Keywords: silicon carbide, 4H-SiC, 6H-SiC, oxidation, high temperature. oksidasi, temperatur tinggi.

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High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Cited by 16 publications

References 21 publications

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Advanced SiC/Oxide Interface Passivation

Phase Changes on 4h and 6h Sic at High Temperature Oxidation

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