High speed silicon Mach-Zehnder modulator

Liao, Ling; Samara-Rubio, Dean; Morse, Mike; Liu, Ansheng; Hodge, Dexter; Rubin, Doron; Keil, U. D.; Franck, T.

doi:10.1364/opex.13.003129

Cited by 479 publications

(228 citation statements)

References 16 publications

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“…The design of a fast and cost efficient CMOS compatible electro-optical modulator is one of the most challenging tasks on the path towards realizing on-chip optical interconnects. In this paper, a predictive modulator model [3] is used that combines the advantages of the structures used in [4] and [5]. To optimize the performance of a modulator, a comprehensive closed-form model [3] is used to determine a proper tradeoff among all physical parameters of a MOS modulator.…”

Section: Scaling Of Electrical Interconnectmentioning

confidence: 99%

On-Chip Copper-Based vs. Optical Interconnects: Delay Uncertainty, Latency, Power, and Bandwidth Density Comparative Predictions

Chen

Haurylau

Nelson

et al. 2006

2006 International Interconnect Technology Conference

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Abstract-As CMOS technology is scaled, it has become increasingly difficult for conventional copper interconnect to satisfy different design requirements. On-chip optical interconnect has been considered as a potential substitute for electrical interconnect. In this paper, predictions of the performance of CMOS compatible optical devices are made based on current state-ofart optical technologies. Based on these predictions, electrical and optical interconnects are compared for delay uncertainty, latency, power, and bandwidth density.

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Section: Scaling Of Electrical Interconnectmentioning

confidence: 99%

On-Chip Copper-Based vs. Optical Interconnects: Delay Uncertainty, Latency, Power, and Bandwidth Density Comparative Predictions

Chen

Haurylau

Nelson

et al. 2006

2006 International Interconnect Technology Conference

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“…High speed optical modulators, capable of performing switching operations, have been realized using these ring resonator structures [16], [17] or the free carrier plasma dispersion effect in Mach-Zhender geometries [10]. The integration of modulators, waveguides and photodetectors with CMOS integrated circuits for off-chip communication has been reported and recently became commercially available [6].…”

Section: Introductionmentioning

confidence: 99%

Photonic networks-on-chip: Opportunities and challenges

Petracca

Bergman

Carloni

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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Abstract-As the number of processing cores that are integrated into a chip multiprocessors (CMP) continues to grow, the network-on-chip paradigm has emerged as a promising solution to address the problem of providing a robust interconnect network among them. In future high-performance CMPs, however, the high bandwidth requirements for both intrachip and off-chip communication are severely challenging the electronic communications infrastructure to meet these demands without consuming a large fraction of the overall on-chip powerdissipation budget. The introduction of photonic technology for on-chip communication holds the promise of delivering scalable bandwidth-per-watt performance that cannot be achieved using only electronic communication. After reviewing the key recent technologies advances that are making possible the integration of photonic devices with CMOS processes, we describe a hybrid micro-architecture for NoCs that combines a broadband photonic circuit-switched network with an electronic packet-switched control network and we discuss the pros and cons of using two different network topologies to implement it.

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“…In these systems, the electrooptic modulator is a key component. Most commercial modulators, such as those made in LiNbO 3 , make use of the linear electrooptic (Pockels) effect. However, this effect is intrinsically zero in single-crystalline Si due to the inversionsymmetry of the crystal structure [1].…”

Section: Introductionmentioning

confidence: 99%

“…This method represents a new method for making electrooptic modulation in Si. Whereas the far majority of proposed silicon modulators [3,4] use the plasma-dispersion effect, the Pockels effect offers advantages of requiring no change of carrier concentration and no current flow for modulation. Therefore it is expected to have very low power consumption and an operation speed which is limited primarily by electrode design.…”

Section: Introductionmentioning

confidence: 99%