For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized. The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon. Recently, however, a continuous-wave Raman silicon laser was demonstrated; if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximately 15 pm V(-1), makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.

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Abstract:We demonstrate a concept for tailoring the group velocity and dispersion properties for light propagating in a planar photonic crystal waveguide. By perturbing the holes adjacent to the waveguide core it is possible to increase the useful bandwidth below the light-line and obtain a photonic crystal waveguide with either vanishing, positive, or negative group velocity dispersion and semi-slow light. We realize experimentally a silicon-on-insulator photonic crystal waveguide having nearly constant group velocity ~c 0 /34 in an 11-nm bandwidth below the silica-line.

Optical bound states in the continuum (BIC) are localized states with energy lying above the light line and having infinite lifetime. Any losses taking place in real systems result in transformation of the bound states into resonant states with finite lifetime. In this Letter, we analyze properties of BIC in CMOS-compatible one-dimensional photonic structure based on silicon-on-insulator wafer at telecommunication wavelengths, where the absorption of silicon is negligible. We reveal that a high-index substrate could destroy both off-Γ BIC and in-plane symmetry protected at-Γ BIC turning them into resonant states due to leakage into the diffraction channels opening in the substrate. We show how two concurrent loss mechanisms, scattering due to surface roughness and leakage into substrate, contribute to the suppression of the resonance lifetime and specify the condition when one of the mechanisms becomes dominant. The obtained results provide useful guidelines for practical implementations of structures supporting optical bound states in the continuum.