3rd IEEE International Conference on Group IV Photonics, 2006. 2006
DOI: 10.1109/group4.2006.1708157
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A Linear Electrooptic Effect in Silicon, Induced by Use of Strain

Abstract: Abstract:The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.

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Cited by 12 publications
(19 citation statements)
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“…In the same year, other breakthroughs were the broadband amplifier based on Raman [51], and the electro-optical effect in strained silicon [52]. In addition, up to 16 cascade ring add/drop filters were produced by IBM [53].…”
Section: Introduction: Silicon Photonicsmentioning
confidence: 99%
“…In the same year, other breakthroughs were the broadband amplifier based on Raman [51], and the electro-optical effect in strained silicon [52]. In addition, up to 16 cascade ring add/drop filters were produced by IBM [53].…”
Section: Introduction: Silicon Photonicsmentioning
confidence: 99%
“…Also by Cornell a broadband amplifier based on Raman gain was introduced [59]. Moreover, the electro-optical effect in strained silicon was demonstrated in 2006 [60].…”
Section: Lifespan Of Silicon Photonicsmentioning
confidence: 98%
“…In 2006, a hybrid silicon evanescent laser was invented by the University of California Santa Barbara and Intel [42], and a broadband amplifier based on Raman gain was introduced by Cornell [43]. Furthermore, the electrooptical effect in strained silicon was demonstrated [44]. Up to 16 cascade ring add/drop filters were produced by IBM [45].…”
Section: Introductionmentioning
confidence: 99%