High-Speed Evanescently-Coupled Waveguide Type-II MUTC Photodiodes for Zero-Bias Operation

Yu, Fengxin; Sun, Keye; Yu, Qianhuan; Beling, Andreas

doi:10.1109/jlt.2020.3014056

Cited by 17 publications

(1 citation statement)

References 15 publications

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“…It can be observed that for all the different junction areas, the theoretical curve is shifted downward by a constant equal to . The difference between the dotted line for and the actual measurement data can be caused due to a parasitic capacitance generated by leakage of electric field at the edges of the diodes’ intrinsic region toward the neighboring layers of the collector layer forming a fringe capacitor in parallel to [85–87]. In summary, the classical method of open-short provides both the and at the price of adding a virtual inductance () with reduced values for in high frequencies leading to an imprecise circuit model of the intrinsic area within the photodetectors.…”

Section: S-parameter Comparison Between De-embedding Methodsmentioning

confidence: 99%

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

Konstantinou

Caillaud

Rommel

et al. 2021

Int. J. Microw. Wireless Technol.

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The generation and transmission of millimeter-wave signals for 5G applications require the use of broadband and high output power photodetectors to bridge from the optical and electronic domains. Therefore, the deep knowledge on the equivalent circuit characteristics of these devices is vital. This study reviews and analyzes de-embedding techniques contributing to the characterization of the physical aspects within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to their active area allowing the extraction of their series resistance and junction capacitance toward the synthesis of an equivalent circuit with lumped elements. The open-short technique is examined and a systematic error introduced by this process underlines the vulnerability of the method on removing parasitics with higher complexity. This error is quantified leading to the implementation of a corrected equation converging with the characteristic features of an $S$ -parameter-based de-embedding. These characteristics are also analyzed through simulation approaches showing minimal equivalent inaccuracies on eliminating more complex symmetrical parasitics. A thorough comparison between these three methods is conducted through the calculation of lumped components corresponding to the active region of diodes with different sizes.

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Section: S-parameter Comparison Between De-embedding Methodsmentioning

confidence: 99%

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

Konstantinou

Caillaud

Rommel

et al. 2021

Int. J. Microw. Wireless Technol.

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High-speed uni-traveling-carrier photodiodes on silicon nitride

et al. 2023

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Integrated photonics is an emerging technology for many existing and future tele- and data communication applications. One platform of particular interest is Silicon Nitride (SiN) thanks to - amongst others - its very low-loss waveguides. However, it lacks active devices, such as lasers, amplifiers and photodiodes. For this, hybrid or heterogeneous integration is needed. Here, we bring high-speed uni-travelling-carrier photodiodes (UTC PDs) to a low-loss SiN-platform by means of micro-transfer-printing. This versatile technology for heterogeneous integration not only allows very dense and material-efficient III-V integration, it also eases fabrication yielding high-performance detectors. The waveguide-coupled photodiodes feature a responsivity of 0.3 A/W at 1550 nm, a dark current of 10 nA and a bandwidth of 155 GHz at a low bias. At zero bias, a record bandwidth of 135 GHz is achieved. We further demonstrate that this integrated detector can be used for direct photomixing at terahertz frequencies. A back-to-back communication link with a carrier frequency around 300 GHz is set up, and data rates up to 160 Gbit/s with low error vector magnitude (EVM) are shown, showcasing near-identical performance at zero bias.

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Bias-Free Operation of Type-II GaInAsSb/InP High Speed Uni-Traveling Carrier Photodiodes

Chaudhary

Ostinelli

Arabhavi

et al. 2022

2022 IEEE Photonics Conference (IPC)

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High-Speed Evanescently-Coupled Waveguide Type-II MUTC Photodiodes for Zero-Bias Operation

Cited by 17 publications

References 15 publications

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

High-speed uni-traveling-carrier photodiodes on silicon nitride

Bias-Free Operation of Type-II GaInAsSb/InP High Speed Uni-Traveling Carrier Photodiodes

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