We investigate the feasibility and performance of photon-number-resolved photodetection employing avalanche photodiodes (APDs) with low dark counts. The main idea is to split n photons over m modes such that every mode has no more than one photon, which is detected alongside propagation by an APD. We characterize performance by evaluating the purities of positive-operator-valued measurements (POVMs), in terms of APD number and photon loss.
Heterogeneous integration through low-temperature die bonding is a promising technique to enable high-performance III-V photodetectors on the silicon nitride (Si3N4) photonic platform. Here we demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 nA dark current, 20 GHz bandwidth, and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Open eye diagrams at 40 Gbit/s are demonstrated. Balanced photodiodes of this type reach 10 GHz bandwidth with over 40 dB common mode rejection ratio.
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