Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.
Clarifying factors that underpinning the variation in wheat yield components between high and middle soil fertility fields is critical to increase grain production and narrow yield gap for smallholder farming systems in the Huang–Huai–Hai Plain (3HP), which characterized by a large variation in soil fertility. Two-year field experiments were conducted to investigate wheat tillering, leaf photosynthesis, and grain filling characteristics in different soil fertility fields: high soil fertility field (HF) and middle soil fertility field (MF). Results showed that the spike formation rate in HF was 12.7%–13.0% higher than that in MF, leading to an 18.0%–19.8% increase in spike number. In addition, HF improved canopy light interception and leaf photosynthesis characteristics after anthesis and delayed leaf senescence, contributing to the increase in both the active grain filling period and grain filling rate. This resulted in a higher 1,000 grain weight in HF, which was 8.2%–8.3% higher than that in MF. Compared to MF, HF obtained higher yields at 9,840 kg ha−1 in 2017/18 and 11,462 kg ha−1 in 2018/19, respectively. In summary, higher spike number and 1,000-grain weight, which were mediated by spike-formation rate, maximization of light interception and improved leaf photosynthesis. These results would have important implications for narrowing yield gap between MF and HF in the 3HP.
We demonstrate GaAs0.5Sb0.5/In0.53AlyGa0.47-yAs uni-traveling carrier (UTC) waveguide photodiodes with high bandwidth of up to 66 GHz at zero bias and over 100 GHz bandwidth under low bias condition.
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