High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection

Shih, Yung‐Feng; Lin, Shian-Ru; Wang, Tsung-Miau; Hwu, Jenn–Gwo

doi:10.1109/ted.2004.833571

Cited by 30 publications

(20 citation statements)

References 12 publications

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“…There are a huge variety of tunneling processes, and many of them have rather minimal temperature dependences. Examples of these are direct tunneling 41 and Fowler-Nordheim tunneling 42 . Further, there are a variety of TL and OSL materials with trap characteristics that indicate tunneling-assisted detrapping 43,44 .…”

Section: Alternative Trap Modelsmentioning

confidence: 99%

Thermoluminescent microparticle thermal history sensors

et al. 2016

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While there are innumerable devices that measure temperature, the nonvolatile measurement of thermal history is far more difficult, particularly for sensors embedded in extreme environments such as fires and explosions. In this review, an extensive analysis is given of one such technology: thermoluminescent microparticles. These are transparent dielectrics with a large distribution of trap states that can store charge carriers over very long periods of time. In their simplest form, the population of these traps is dictated by an Arrhenius expression, which is highly dependent on temperature. A particle with filled traps that is exposed to high temperatures over a short period of time will preferentially lose carriers in shallow traps. This depopulation leaves a signature on the particle luminescence, which can be used to determine the temperature and time of the thermal event. Particles are prepared-many months in advance of a test, if desired-by exposure to deep ultraviolet, X-ray, beta, or gamma radiation, which fills the traps with charge carriers. Luminescence can be extracted from one or more particles regardless of whether or not they are embedded in debris or other inert materials. Testing and analysis of the method is demonstrated using laboratory experiments with microheaters and high energy explosives in the field. It is shown that the thermoluminescent materials LiF:Mg,Ti, MgB 4 O 7 :Dy,Li, and CaSO 4 :Ce,Tb, among others, provide accurate measurements of temperature in the 200 to 500°C range in a variety of high-explosive environments.

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Section: Alternative Trap Modelsmentioning

confidence: 99%

Thermoluminescent microparticle thermal history sensors

et al. 2016

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“…At each node unit, there are k inputs from the k neighbor nodes for the expected costs. The local router temperature comes from distributed embedded sensors in the chip, similar to any of the proposed on-chip sensors in Shih et al [2004] and Chung and Yang [2011], while the throttling level is computed locally in each node by Algorithm 1. The output of the DP unit at node n c is the updated expected cost V * (n c , n d ) and is sent to all adjacent nodes.…”

Section: Noc Routing In the Dprtmmentioning

confidence: 99%

Dynamic programming-based runtime thermal management (DPRTM)

Al-Dujaily

Dahir

Mak

et al. 2013

ACM Trans. Des. Autom. Electron. Syst.

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Complex thermal behavior inhibits the advancement of three-dimensional (3D) very-large-scale-integration (VLSI) system designs, as it could lead to ultra-high temperature hotspots and permanent silicon device damage. This article introduces a new runtime thermal management strategy to effectively diffuse and manage heat throughout 3D chip geometry for a better throughput performance in networks on chip (NoC). This strategy employs a dynamic programming-based runtime thermal management (DPRTM) policy to provide online thermal regulation. Reactive and proactive adaptive schemes are integrated to optimize the routing pathways depending on the critical temperature thresholds and traffic developments. Also, when the critical system thermal limit is violated, an urgent throttling will take place. The proposed DPRTM is rigorously evaluated through cycle-accurate simulations, and results show that the proposed approach outperforms conventional approaches in terms of computational efficiency and thermal stability. For example, the system throughput using the DPRTM approach can be improved by 33% when compared to other adaptive routing strategies for a given thermal constraint. Moreover, the DPRTM implementation presented in this article demonstrates that the hardware overhead is insignificant. This work opens a new avenue for exploring the on-chip adaptability and thermal regulation for future large-scale and 3D many-core integrations.

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“…Shih et al [8] describe one of these approaches with a large area implementation. The recent work by Zhai et al [9] improves this idea with a tiny design suitable for the detection of temperature gradients.…”

Section: Introductionmentioning

confidence: 99%

Leakage-based On-Chip Thermal Sensor for CMOS Technology

Ituero

Ayala

López‐Vallejo

2007

2007 IEEE International Symposium on Circuits and Systems (ISCAS)

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Thermal characterization of ICs and on-chip temperature monitoring have become key tasks in electronic engineering. In this paper, we present the design of an on-chip CMOS temperature sensor based on the temperature dependent characteristics of the subthreshold current. The proposed sensor achieves high accuracy sensing (0.56 o C maximum error), wide temperature range (25-90 o C), and extremely low area (0.010 mm 2 ) and power overhead (18 µW). Our approach improves previous works on on-chip temperature sensors and is highly suitable for portable applications where temperature monitoring achieves great importance 1 .

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High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection

Cited by 30 publications

References 12 publications

Thermoluminescent microparticle thermal history sensors

Thermoluminescent microparticle thermal history sensors

Dynamic programming-based runtime thermal management (DPRTM)

Leakage-based On-Chip Thermal Sensor for CMOS Technology

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