A review is made of the physics and technology of spectrally selective thermal detectors, especially those operating at non-cryogenic temperatures. The background radiation noise fluctuations are rederived for arbitrary spectral characteristics. Infrared absorption due to phonons and free carriers is discussed followed by a review of published works on artificial infrared absorption materials such as patterned grids, nanoparticles, plasmonic structures, metamaterials and others. Subsequently, the literature of the spectral characteristics of broadband thermal detectors and spectrally selective thermal detectors is reviewed. Finally, the authors speculate on the directions that future research and development in the area will take regarding architectures, sensitivity and spectral characteristics.

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10−4/°C and (1.43±0.07)×10−4/°C, respectively.

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A resonant absorption cavity that couples long-wavelength infrared (LWIR) light into a movable plate has been demonstrated for thermal detectors, especially microbolometers. Each device is continuously tunable over 8.7-11.1 microm by using electrostatic actuation with voltages from 0 to 42 V. The width of the resonance is relatively broad, approximately 1.5 microm, to match the large widths of many spectral features in the LWIR. At an actuation voltage of 45 V, the device switches into a broadband mode with an absorption width of 2.83 microm. This latter mode is used to enhance sensitivity in low-light situations in which little spectral information is present.

Hafnia-alumina nanolaminates show improved smoothness and reduced crystallinity relative to pure hafnia in films formed by atomic layer deposition (ALD). However, typical nanolaminates also show reduced cross-plane thermal conductivity due to the much larger interface density relative to continuous films. We find that the interface thermal resistance in hafnia-alumina nanolaminates is very low and does not dominate the film thermal conductivity, which is 1.0 to 1.2 W/(m K) at room temperature in 100 nm thin films regardless of the interface density. Measured films had a number of interfaces ranging from 2 to 40, equivalent to interface spacing varying from about 40 to 2 nm. The degree of crystallinity of these films appears to have a much larger effect on thermal conductivity than that of interface density. Cryogenic measurements show good agreement with both the minimum thermal conductivity model for disordered solids and the diffuse mismatch model of interface resistance down to about 80 K before diverging. We find that the films are quite smooth through a 400:5 ratio of hafnia to alumina in terms of ALD cycles, and the refractive index scales as expected with increasing alumina concentration.