This work studies the breakdown ͑BD͒ characteristics of metal-oxide-semiconductor ͑MOS͒ capacitors at various temperatures. The oxide thickness and temperature significantly affect the probability of BD. BD does not easily occur in ultrathin silicon dioxide when biased in the positive substrate injection region of MOS͑p͒. However, the BD frequency increases dramatically with the oxide thickness or the temperature. The phenomenon was explained by temperature effect. When the temperature increases, the voltage drop across the silicon dioxide increases; on the contrary, the voltage across the ͑deep͒ depletion region in the Si substrate declines. Also, the enhancement of percolation and the increase in the number of interface states result in the more severe degradation of the silicon dioxide. Also, a thicker oxide has more Dit, and so undergoes degradation more easily. Finally, the C -V characteristics of the MOS capacitor in the ͑deep͒ depletion region are also discussed in order to understand the mechanisms among temperature, thickness, and percolation effect.
Rapid thermal oxidations were simultaneously performed on n-and p-type silicon substrates to investigate the saturation currents of metal-oxide-semiconductor ͑MOS͒ capacitors. For MOS capacitors on n-type Si substrates, the curves of capacitance versus gate voltage ͑C-V͒ show almost no fixed charge, no lateral nonuniformity, and little interface trap density ͑D it ͒. The mechanism of the generation of the saturation current is recombination, and was investigated by electroluminescence. Also, the saturation current decreases as the oxide becomes thicker. However, the oxidation temperature must be sufficiently high to form high-quality oxide on p-type Si substrate. Controlled by minority carrier generation, the saturation current of the MOS ͑p͒ capacitor also depends on D it , suboxide, and bulk trap density. The saturation current increases with the thickness of the oxide. The generation mechanism of the saturation currents of MOS ͑p͒ capacitors was also investigated by observing their dependencies on temperature. The mechanisms of the generation saturation currents of MOS capacitors grown on n-and p-type Si substrates are basically different.
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