Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide <formula formulatype="inline"><tex>$(\hbox{HfO}_{2})$</tex></formula> Film Added on Silicon Dioxide <formula formulatype="inline"><tex>$(\hbox{SiO}_{2})$</tex></formula>

Enhancement of Temperature Sensitivity for Metal–Insulator–Semiconductor Temperature Sensors by Using Bi2Mg2/3Nb4/3O7 Film

“…3) In order to solve the problem, complementary metal-oxidesemiconductor (CMOS) compatible sensors that used metaloxide-semiconductor (MOS) tunneling diode were introduced. [3][4][5] In the MOS tunneling diode type temperature sensors, saturation current of sensor was used for temperature detection. The saturation current is determined by minority carrier generation rate and direct tunneling.…”

“…6) Instead of extremely thin SiO 2 , HfO 2 layer was adopted to insulator layer of MOS tunneling diode type temperature sensor. 4) In this work, we introduce a different type of metalinsulator-semiconductor (MIS) tunneling diode type temperature sensor with Bi 2 Mg 2=3 Nb 4=3 O 7 (BMNO) layer. In the previous works, BMNO layers had high dielectric constants and were proven to be acceptable for various applications.…”

“…When using current gain as the detecting parameter, the variations of saturation current levels can be diminished. 4) Figures 2(c) and 2(d) show the comparison of the current gain versus BMNO film thickness and annealing temperature variation. Considering the temperature sensor with 10 nm BMNO film and 600 C annealing temperature, each increase of 20 C in the chuck's temperature induces more than quadruple amount of the saturation current.…”