Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications

Gupta, Prachi; Soni, Mahesh; Sharma, Satinder K.

doi:10.1007/s10854-019-02718-7

Cited by 4 publications

(6 citation statements)

References 37 publications

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“…Figure shows the benchmarking of threshold voltage versus dielectric constant of Al/Cu‐MOCs/Si MIS structures as related with previously reported MOFs, inorganic, and organic dielectrics based p‐MIS structures [ 43,55,72,77,80,81 ] . The fabricated Al/Cu‐MOCs/Si MIS structures reported a dielectric constant of (κ ≈ 5.49), and threshold voltage of (≈0.17 V), respectively as shown in Figure 8.…”

Section: Resultsmentioning

confidence: 80%

“…The fabricated Al/Cu‐MOCs/Si MIS structures reported a dielectric constant of (κ ≈ 5.49), and threshold voltage of (≈0.17 V), respectively as shown in Figure 8. Cu‐MOCs dielectric based Al/Cu‐MOCs/Si MIS structures, exhibit positive threshold voltage as compared to mainstream, especially inorganic dielectric based MIS structures [ 55,77,81 ] . Also, Cu‐MOCs show high dielectric constant in comparison with state‐of‐art MOFs based dielectrics [ 43,80 ] .…”

Section: Resultsmentioning

confidence: 99%

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Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Gupta

Kumar

Sharma

2021

Adv Elect Materials

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The suitability of metal‐organic frameworks (MOFs) as functional materials for future electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface, low leakage current, and better compatibility is still an open challenge. Owing to the synergistic complementary properties of MOFs systems, a low‐cost copper‐metal‐organic nanoclusters (Cu‐MOCs) has been synthesized comprising inorganic copper metal unit allied organic m‐toluic acid ligand by facile sol–gel strategy. It offers large‐area thin‐films uniformity, high dielectric constant (κ ≈ 5.49), improved interfacial properties, dynamic switching behavior with the stimuli field, and extends the realization of metal‐organic‐framework dielectric for scalable complementary‐metal‐oxide‐semiconductor (CMOS) logic applications over customary hybrid counterparts. Various techniques such as single crystal X‐ray diffraction, X‐ray photoelectron spectroscopy, thermogravimetric analysis, and energy dispersive X‐ray spectroscopy have been used to validate the Cu‐MOCs formulation. In particular, the fabricated Cu‐MOCs, metal–insulator–semiconductor structures exhibit promising dynamic switching behavior responsive to the applied field, hysteresis‐free capacitance–voltage characteristics, low interfacial trap density (≈1.4 × 1011 eV−1 cm−2), low effective oxide charges (≈1.1 × 1011 cm−2), and noteworthy small leakage current density (≈1.29 nA cm−2 @ 1 V) ever since in electrical analysis. Cost‐effective novel Cu‐MOCs successfully demonstrate high‐performance, reliable gate dielectrics for next‐generation CMOS logic devices.

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Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Gupta

Kumar

Sharma

2021

Adv Elect Materials

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“…The B 1s (Figure a) and N 1s (Figure b) h-BN QDs were recorded as a function of depth in the agarose/h-BN QDs polymer sheet, and their corresponding atomic percentage with respect to the depth of B 1s and N 1s is shown in Figure c. As shown in Figure a,b, the intensities of the B 1s and N 1s core peak of h-BN QDs decrease with an increase in the etching time, suggesting that the layers are gradually removed by etching . In addition, the binding energy position of B 1s and N 1s did not shift as the etching depth time increased, indicating that the chemical state of h-BN QDs remained the same after etching depth increases and/or the presence of h-BN QDs in all layers of a polymer, as expected.…”

Section: Resultsmentioning

confidence: 93%

Hexagonal Boron Nitride Quantum Dots Embedded on Layer-by-Layer Films for Peroxidase-Assisted Colorimetric Detection of β-Galactosidase Producing Pathogens

Majumdar,

Gogoi,

Boruah

et al. 2024

ACS Appl. Mater. Interfaces

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Pathogen detection has become a major research area all over the world for water quality surveillance and microbial risk assessment. Therefore, designing simple and sensitive detection kits plays a key role in envisaging and evaluating the risk of disease outbreaks and providing quality healthcare settings. Herein, we have designed a facile and low-cost colorimetric sensing strategy for the selective and sensitive determination of β-galactosidase producing pathogens. The hexagonal boron nitride quantum dots (h-BN QDs) were established as a nanozyme that showed prominent peroxidase-like activity, which catalyzes 3,3′,5,5′-tetramethylbenzidine (TMB) oxidation by H2O2. The h-BN QDs were embedded on a layer-by-layer assembled agarose biopolymer. The β-galactosidase enzyme partially degrades β-1,4 glycosidic bonds of agarose polymer, resulting in accessibility of h-BN QDs on the solid surface. This assay can be conveniently conducted and analyzed by monitoring the blue color formation due to TMB oxidation within 30 min. The nanocomposite was stable for more than 90 days and was showing TMB oxidation after incubating it with Escherichia coli (E. coli). The limit of detection was calculated to be 1.8 × 106 and 1.5 × 106 CFU/mL for E. coli and Klebsiella pneumonia (K. pneumonia), respectively. Furthermore, this novel sensing approach is an attractive platform that was successfully applied to detect E. coli in spiked water samples and other food products with good accuracy, indicating its practical applicability for the detection of pathogens in real samples.

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“…[18][19][20][21][22][23] To improve the memory characteristics of the floating-gate devices, there are many reports to realize low-voltage operation utilizing high-k dielectrics. [24][25][26][27][28][29][30] We have reported the lowvoltage operation of the floating-gate structure utilizing a Ndoped LaB 6 /LaB x N y stacked structure. 10) Although the program/erase characteristics were observed, the memory characteristics should be improved.…”

Section: Introductionmentioning

confidence: 99%

N₂ gas flow rate dependence on the high-k LaB _x N _y thin film characteristics formed by RF sputtering for floating-gate memory applications

Park

Kamata

Ohmi

2021

Jpn. J. Appl. Phys.

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In this paper, the N2 gas flow rate dependence on the high-k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications was investigated. The N2 gas flow rate during the sputtering for the LaB x N y insulating layer was increased from 3 to 9 sccm with the Ar of 10 sccm for N-doped LaB6 (Metal: M)/LaB x N y (Insulator: I)/p-Si(100). Then, the N-doped LaB6/LaB x N y /N-doped LaB6/LaB x N y /p-Si(100) MIMIS diode was fabricated with LaB x N y tunnel layer and block layer formed by Ar/N2 gas flow ratio of 10/7 sccm. The equivalent oxide thickness (EOT) was decreased from 7 to 5.5 nm by increasing the N2 gas flow rate from 3 to 7 sccm. On the other hand, the LaB x N y insulating layer formed by N2 gas flow rate of 9 sccm showed EOT of 8.2 nm with crystallization. Furthermore, the memory window of 0.4 V was obtained for the MIMIS floating-gate structure utilizing the N-doped LaB6/LaB x N y stacked layer.

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Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications

Cited by 4 publications

References 37 publications

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

Hexagonal Boron Nitride Quantum Dots Embedded on Layer-by-Layer Films for Peroxidase-Assisted Colorimetric Detection of β-Galactosidase Producing Pathogens

N₂ gas flow rate dependence on the high-k LaB _x N _y thin film characteristics formed by RF sputtering for floating-gate memory applications

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