High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Abstract

Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1–x Ni x O (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1–x Ni x O films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10–7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.

Enhanced photodetection and a wider spectral range in the In2S3–ZnO 2D–3D heterojunction: combined optical absorption and enhanced carrier separation at the type-II heterojunction

“…The optical to electrical efficiency of a photodetector can be demonstrated in terms of the responsivity, which is defined by the formula given in eqn (4). 49 where P λ is the incident optical power corresponding to the wavelength. Fig.…”

Solution processed transparent anatase TiO2 nanoparticles/MoO3 nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

“…This increases the electron tunneling, and the electron migration in large numbers is related to the EQE over 100%. 80,81 It can be proposed that the densely aligned nanostructures could expose multiple junctions sensitive to the UV light and could also provide efficient pathways for the transport of carriers, leading to the enhancement in the photocurrent and EQE. 50,82 When compared to previous reports, the improvement can also be related to the mobility of the anatase TiO 2 used in this work which is known to be better than that of rutile TiO 2 .…”

Enhanced opto-electronic properties of X-doped (X = Al, Ga, and In) CuO thin films for photodetector applications

“…Similarly, Yin et al have studied the effect of Ni-doped CuO lms with high responsivity and external quantum e ciency photodetectors [23]. The effect of doping Al(1%), Sb(1%), and Sn(1%) to ZnS-thin lm synthesized via spray pyrolysis method has been examined for photodetector applications [24].…”