Recent trends in optoelectronics still need a high e cient photodetector based on p-type metal oxide semiconductors. This work stands with the improvement in the performance of CuO thin lms via doping with different metals into the thin lms. The CuO thin lms were successfully doped with 1 wt% of X (X=Al, Ga, and In) by spray pyrolysis technology. The prepared doped CuO thin lms were characterized to interpret the structural, morphological, and elemental characteristics using advanced techniques. These doped CuO thin lms were subjected to study the photodetection ability by analyzing optoelectronic properties. The doping also has tuned the optical and electrical properties. Among the fabricated photodetectors, the Al-doped CuO detector shows a maximum photocurrent. The CuO:Al(1.0%) thin lm exhibits a high photocurrent of 2.59⨯10 -6 A, the responsivity of 2.82⨯10 -1 AW -1 , the external quantum e ciency of 66%, and detectivity of 1.45⨯10 10 Jones. Compared to the other thin lms, Al doping has remarkably reduced the bandgap and shows a good photosensing activity that may be due to an increase in charge carriers. These outcomes provide a way to assemble good photodetectors and tune their properties in a wide range.
We report co-doping effects of transition metal elements (Ni, Co) primarily on the opto-electronic properties of CuO thin films. CuO, CuO:Ni(1%), CuO:Co(1%) and CuO:Ni(1%):Co(1%) thin films were deposited via the sprays pyrolysis route. Structural studies revealed the monoclinic CuO structure for all films. For all the films scanning electron microscope (SEM) images showed a crack-free and homogeneous surface. Photoluminescence (PL) spectra of all the films exhibited four emission peaks at 415, 451, 477, and 521 nm wavelengths. The optical bandgap (Eg) values were around 2.12 eV, 2.18 eV, 2.05 eV and 1.84 eV for CuO, CuO:Ni(1%), CuO:Co(1%) and CuO:Ni(1%):Co(1%) thin films, respectively. CuO:Ni(1%):Co(1%) photo-device displayed a large responsivity (R) of 0.43 AW-1, external quantum efficiency (EQE) of 100% and detectivity (D*) of 9.55x109Jones. Hence, co-doping of transition metal elements would be one of the effective approaches for enhancing opto-electronic properties of metal oxide compounds.
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