2022
DOI: 10.1007/s10854-022-08728-2
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced opto-electronic properties of X-doped (X = Al, Ga, and In) CuO thin films for photodetector applications

Abstract: Recent trends in optoelectronics still need a high e cient photodetector based on p-type metal oxide semiconductors. This work stands with the improvement in the performance of CuO thin lms via doping with different metals into the thin lms. The CuO thin lms were successfully doped with 1 wt% of X (X=Al, Ga, and In) by spray pyrolysis technology. The prepared doped CuO thin lms were characterized to interpret the structural, morphological, and elemental characteristics using advanced techniques. These doped Cu… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(2 citation statements)
references
References 52 publications
0
2
0
Order By: Relevance
“…This change in D values may be due to the shift and broadening of the peaks due to defects in crystal symmetry caused by the addition of Al 3+ to the solution. This difference can also be attributed to differences in the radii of Cu 2+ (0.57 Å) and Al 3+ (0.39 Å) (for a 4-coordination number) …”
Section: Resultsmentioning
confidence: 99%
“…This change in D values may be due to the shift and broadening of the peaks due to defects in crystal symmetry caused by the addition of Al 3+ to the solution. This difference can also be attributed to differences in the radii of Cu 2+ (0.57 Å) and Al 3+ (0.39 Å) (for a 4-coordination number) …”
Section: Resultsmentioning
confidence: 99%
“…Among the above-mentioned strategies, doping has been found to be an effective route to enhance the physico-chemical and opto-electrical properties by tuning the electronic band structure. Although several atoms have been used to tune the properties of CuO, Al has been observed to be a highly suitable dopant due to its low cost, easy availability, and non-toxicity, as well as its remarkable influence on the structural, morphological, thermal, and optical properties of CuO nanostructures due to the energetically favorable ionic radius of Al +3 (0.53 Å) against Cu +2 (0.73 Å) for substitutional doping [36][37][38].…”
Section: Introductionmentioning
confidence: 99%