Solution processed transparent anatase TiO<sub>2</sub> nanoparticles/MoO<sub>3</sub> nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Ezhilmaran, Bhuvaneshwari; Dhanasekar, M.; Bhat, S. Venkataprasad

doi:10.1039/d0na00780c

Cited by 24 publications

(14 citation statements)

References 83 publications

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“…The overall performance of Au/PLZT/TiO 2 /FTO heterojunction self-powered UV PDs is summarized and further compared with those of recently reported ferroelectric and semiconductor-based selfpowered UV PDs,as given in Tables 1 and 2. 1,[27][28][29][30][31][32][33][34][35][36] Clearly, the self-powered UV PD obtained in this work has the largest responsivity, highest specific detectivity, and fastest response speed among those self-powered UV PDs.…”

Section: Methodsmentioning

confidence: 74%

“…Ultraviolet (UV) photodetectors (PDs), which are prepared with wide band-gap semiconductor materials (such as TiO 2 , ZnO, SnO 2 , Ga 2 O 3 , and GaN), have been widely used in fire warning, wireless communication, missile tracking, environmental protection, remote control, and ozone hole detecting due to their superior photoelectric response properties and stability. [1][2][3][4][5] However, in order to convert UV light to electrical signal, these semiconductorbased UV PDs usually require an external driving force for separating and transporting photo-generated carriers. This causes a large amount of energy consumption and restricts the miniaturization and integration of the devices.…”

Section: Introductionmentioning

confidence: 99%

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Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Zhang

Chen

et al. 2021

J Am Ceram Soc

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In current semiconductor-based self-powered ultraviolet (UV) photodetectors (PDs), because the built-in electric field only exits in the space-charge region of p-n junction or Schottky junction interfaces, the photo-generated carriers can't be efficiently separated and thus the photoelectric response is low. To solve this issue, in this work, we design and fabricate new-type Pb,La(Zr,Ti)O 3 ferroelectrics/TiO 2 semiconductors heterojunction self-powered UV photodetectors. The results indicate that by introducing Pb,La(Zr,Ti)O 3 ferroelectric layers, the photocurrent of the PDs is greatly improved and at a negative poling electric voltage, the device exhibits excellent self-powered UV photoelectric properties with a large responsivity of 21 mA/W, high specific detectivity of 2.4 × 10 11 Jones, and fast response speed (rise time of 2.4 ms, decay time of 3.2 ms). These values are far superior to those of all recently reported self-powered UV PDs and their huge improvement is primarily because the depolarization field caused by the high remnant polarization of Pb,La(Zr,Ti)O 3 and the built-in electric field resulting from the heterojunction interfaces of the Pb,La(Zr,Ti)O 3 and the TiO 2 thin films jointly enhance the separation efficiency of photo-generated electrons and holes.Besides, the heterojunction PDs also show good weak UV light detection ability. This work opens new avenue for designing and fabricating next-generation selfpowered UV PDs by a simple, low-cost, and easy to mass-produce way.

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Section: Methodsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Zhang

Chen

et al. 2021

J Am Ceram Soc

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“…Many other oxides, such as Co 3 O 4 , [191] WO 3 , [192] Co 0.7 Ni 0.3 O, [193] GO, [194] Al 2 O 3 , [195] MoO 3 , [196] TiO 2−x H x , [197] SrTiO 3 , [198] MgO, [199] In 2 O 3 , [200] ZnTiO 3 , [101] and Cu 2 O [201] have also been integrated with TiO 2 in the form of either multilayered or core-shell architectures to improve the photodetection performance of TiO 2 -based PDs. For example, Mahala et al [191] developed a TiO 2 /Co 3 O 4 multilayer heterojunction by applying a stable, simple, and scalable reactive sputtering technique for UV and visible-blind photovoltaic applications.…”

Section: Tio 2 /Other Oxidesmentioning

confidence: 99%

“…Many other oxides, such as Co 3 O 4 , [ 191 ] WO 3 , [ 192 ] Co 0.7 Ni 0.3 O, [ 193 ] GO, [ 194 ] Al 2 O 3 , [ 195 ] MoO 3 , [ 196 ] TiO 2− x H x , [ 197 ] SrTiO 3 , [ 198 ] MgO, [ 199 ] In 2 O 3 , [ 200 ] ZnTiO 3 , [ 101 ] and Cu 2 O [ 201 ] have also been integrated with TiO 2 in the form of either multilayered or core–shell architectures to improve the photodetection performance of TiO 2 ‐based PDs. For example, Mahala et al.…”

Section: Heterostructure Photodetectorsmentioning

confidence: 99%

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

et al. 2022

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moderate UV light is beneficial for human health, however, excessive UV radiation can cause various human diseases as well as strong destruction to the output of crops and the lifespan of buildings. [1b,3a,4] Therefore, an efficient detection of UV radiation is of significant importance in widespread applications, for example, chemical, environmental, and biological analysis or warning, astronomical investigation, and optical communication. [1c,5] For forewarning UV radiation with high-efficiency, a wide variety of UV PDs such as photomultiplier and silicon diode, have been extensively investigated and applied in the past decades. Nevertheless, there are intrinsic imperfections for the present commercial PDs, such as fragile, large volume, and excessive cost, which are obstacles when meeting the growing requirement of miniaturized and reliable UV detection devices for portable or shipped applications. In recent years, the development of semiconductor-based PDs that work according to the photoelectric effect has received great research interest. [1b,3a,6] In this scenario, a delicate selection of suitable materials with efficient morphological, microstructural, and photoelectrical characteristics plays a key role in the construction of PDs with high-performance. Generally, the PDs work following several different physical mechanisms, that is, surface plasma-wave-assisted effect, photoconductive effect, photothermoelectric effect, and photovoltaic effect, which have been systematically demonstrated in the previous report. [7] More recently, a new generation of wide-bandgap semiconductors including the classification of nitrides (GaN, AlN, BN, etc.), carbides (SiC, diamond, etc.), sulfides (ZnS, etc.), oxides (ZnO, Ga 2 O 3 , TiO 2 , etc.), halide perovskites (e.g., CH 3 NH 3 PbCl 3 ), [8] and their combinations, is emerged as the most attractive material candidates for constructing high-performance UV PDs, owing to their unique advantages, for instance low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates, excellent radiation resistance, and their appropriate spectral range for UV response. [1d] In addition, the photoelectric conversion processes of the semiconductorbased PDs can be generally described by the behaviors of charge carriers, such as their generation, separation, transportation, and extraction. [9] Therefore, any factor that influences the photon-generated carrier behaviors should be the key parameter for further tuning their photodetecting performances. It As a wide-bandgap semiconductor material, titanium dioxide (TiO 2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and lowcost fabrication, the construction of high-performance photodetectors (PDs) based on TiO 2 nanostructures is ...

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“…The pure NaTaO 3 sensor had a resistance-to-current ratio of only 3, significantly lower than the NaTaO 3 /TiO 2 detector. Ezhilmaran et al prepared and studied the all-oxide, highly transparent TiO 2 /MoO 3 bilayer film for the first time on the platform of nano-anatase [ 14 ]. The film was composed using a simple solution method, and its application in ultraviolet detection was demonstrated.…”

Section: Optoelectrical Application Based On Tio 2 ...mentioning

confidence: 99%

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

Sang

Yao

et al. 2023

Nanomaterials

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Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO2-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO2-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.

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Solution processed transparent anatase TiO₂ nanoparticles/MoO₃ nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Abstract: A TiO2/MoO3 transparent bilayer based UV photodetector self-powered by the built-in potential at the interface.

Cited by 24 publications

References 83 publications

Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

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Solution processed transparent anatase TiO2 nanoparticles/MoO3 nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Abstract: A TiO2/MoO3 transparent bilayer based UV photodetector self-powered by the built-in potential at the interface.

Cited by 24 publications

References 83 publications

Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Ultrasensitive self‐powered UV PDs via depolarization and heterojunction fields jointly enhanced carriers separation

Application of Nanostructured TiO2 in UV Photodetectors: A Review

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

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Solution processed transparent anatase TiO₂ nanoparticles/MoO₃ nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Application of Nanostructured TiO₂ in UV Photodetectors: A Review