Enhanced photodetection and a wider spectral range in the In₂S₃–ZnO 2D–3D heterojunction: combined optical absorption and enhanced carrier separation at the type-II heterojunction

Abstract

Highly efficient broadband photodetectors based on 2D metal chalcogenides have enchanted immeasurable research curiosity due to their tunable bandgap and unique electrical properties suitable for applications in optoelectronic nanodevices. In...

Extended Photoresponse in the UV–Visible Region with Multilayered Band Alignment in a In2S3-WO3-ZnO Nanostructure Heterojunction for Photoelectrochemical Water Splitting

“…An energy band diagram is plotted to analyze the junction’s charge carrier transfer mechanism and electronic nature. The energy band diagram is plotted based on work function (KPFM analysis), valence band offsets (XPS analysis), and bandgap (absorption analysis) . KPFM measurements were taken in dark conditions to calculate the work function values.…”

“…It was seen that the 2D-3D In 2 S 3 -ZnO heterojunction in PEC water splitting had shown an improved photocurrent density of 2.3 mA cm –2 as compared to pristine In 2 S 3 and ZnO samples in the presence of Na 2 SO 4 electrolytes . The In 2 S 3 -ZnO heterojunction has shown a responsivity value of 440 mA/W, specific detectivity of 10 × 10 10 Jones, and external quantum efficiency of 330% in the UV–visible region owing to more absorption and charge carrier separation at the interface at specific wavelengths 450 and 600 nm . Our main aim is to improve the photoresponse across the complete UV–visible spectral range for this thin layer of oxide material with a bandgap lying between ZnO and In 2 S 3 nanoflakes.…”

“…17 and external quantum efficiency of 330% in the UV−visible region owing to more absorption and charge carrier separation at the interface at specific wavelengths 450 and 600 nm. 18 Our main aim is to improve the photoresponse across the complete UV−visible spectral range for this thin layer of oxide material with a bandgap lying between ZnO and In 2 S 3 nanoflakes. Owing to its properties, WO 3 is an excellent candidate to facilitate charge carrier separation and strong oxidation ability.…”

Solvothermal Growth of Chiral β-In2S3 Nanosheet Arrays for Circularly Polarized Photodetection

“…β-In 2 S 3 is a n-type semiconductor with a bandgap of ∼1.9 to 2.3 eV. − β-In 2 S 3 has been intensively investigated for optoelectronic devices due to its superior photoelectric sensitivity, low toxicity, and high absorption coefficient. ,− The intrinsic vacancy defects in β-In 2 S 3 would act as an intermediate band, which can effectively promote the photoresponse spectrum from ultraviolet to near-infrared. ,− The β-In 2 S 3 properties have been found highly dependent on nano-morphologies. Among them, the two-dimensional (2D) β-In 2 S 3 nanosheet structure exhibits excellent optoelectronic performance and can be prepared by chemical vapor deposition or the solvothermal method. ,− For these advantages, β-In 2 S 3 nanosheets could be a potential candidate for circularly polarized photodetectors in the case of chiral nanostructures prepared.…”