High Rate Anisotropic Aluminum Etching

Abstract

A high rate anisotropic etching process, suitable for plasma etching one wafer at a time, is discussed. Results indicate that the etch rate is overridingly dependent on the Cl2 concentration and is independent of the rf power used to drive the discharge. Several additives are used to control the etching process. BCl3 is added to initiate etching, and CHCl3 is included to control the anisotropy. Large amounts of He assist photoresist preservation. Parametric studies supporting the roles of the additives have been made.

The influence of non-ideal microstructures on the analysis of grain boundary impedances

“…5) we expect that this condition for the two partial pressure, bias and grain size dependence of R 2 . If current constriction plays a role, the temperature and partial pressure dependence of R 2 should be * transfer resistance at contact close to that of the bulk as already predicted by E 0 ideally conductingcontact intuitive models [3,[5][6][7]13]. A bias-dependent 'grain O boundary resistance', on the other hand, suggests other mechanisms than current constriction.…”

High Specific Energy Density Aqueous Lithium-Metal Chloride Rechargeable Batteries

“…The impedance profiles show a semicircle, which is attributed to the grain boundary resistance. 20 No change in the impedance profiles of the cell was observed for three weeks. Figure 2b shows the temperature dependence of the electrical conductivity for LAGTP.…”

Dipolar relaxation and impedance of an yttria-stabilised zirconia ceramic electrolyte

“…The effect of porosity on the impedance response of YSZ ceramics has been considered (21) ; a model for constriction resistances associated with porous Li + ion conducting ceramics has been proposed (25) which has the characteristic feature of a similar activation energy for bulk and constriction resistances provided the same material and conduction mechanism is responsible for the two impedances. The present results, tables 1 and 2, show a grain boundary resistance, R gb , with a similar activation energy to that of R 1 that may also, therefore, be constrictive in nature.…”

“…Such an element, (R 1 -C 1 -CPE 1 ), represents accurately the typical bulk impedance response of numerous ionic and electronic hopping conductors at high frequencies (7)(8)(9)(10)(11)(12)(13) . Recognition of the usefulness and indeed, validity, of CPEs allows accurate modelling of combined bulk conductivity and permittivity data over wide ranges of frequency.…”