Dipolar relaxation and impedance of an yttria-stabilised zirconia ceramic electrolyte

Hernández, Máximo; West, Anthony R.

doi:10.1039/c5ta08990e

Cited by 18 publications

(11 citation statements)

References 26 publications

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“…9 inset. This circuit has been shown recently to model accurately the impedance data of yttria-stabilised zirconia, YSZ, which also showed an intermediate frequency capacitance plateau whose magnitude was too small to attribute to a series-related impedance [46]. A good fit to this circuit was obtained as shown for one data set in Fig.…”

Section: Bi 25 Feo 39mentioning

confidence: 63%

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Perejón

Gil‐González

West

et al. 2019

Journal of the European Ceramic Society

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Section: Bi 25 Feo 39mentioning

confidence: 63%

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Perejón

Gil‐González

West

et al. 2019

Journal of the European Ceramic Society

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“…20 Here we show that, with single crystal data and no contribution from grain boundary impedances, it is possible to identify unambiguously the most appropriate equivalent circuit. Circuit B is also the most logical circuit since it represents the two parallel processes of conduction and dielectric relaxation.…”

Section: Discussionmentioning

confidence: 79%

Electrical Properties of Yttria-Stabilized Zirconia, YSZ Single Crystal: Local AC and Long Range DC Conduction

Vendrell

West

2018

J. Electrochem. Soc.

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Widely-used complex plane analysis of impedance data is insufficiently sensitive to characterize fully the bulk properties of YSZ single crystal. Instead, more extensive data analysis is needed which uses a combination of parallel, admittance-based formalisms and series, impedance-based formalisms. Bulk electrical properties are measured at higher frequencies and contain contributions from both long range conduction and local dielectric relaxation. At lower frequencies, electrode-sample contact impedances are measured and are included in full equivalent circuit analysis. The impedance of YSZ crystal of composition 8 mol% Y 2 O 3 in the (110) orientation, with Pt electrodes, was measured over the temperature range 150-750 • C and frequency range 0.01 Hz-3 MHz. Full data analysis required (i) a parallel constant phase element (CPE)-resistance (R) combination to model the electrode response, (ii) a series R-C element to represent local reorientation of defect dipoles and (iii) a R-C-CPE element to represent long range oxide-ion conduction; (ii) and (iii) together model the bulk response. The dielectric element underpins all discussions about defect structure and properties of YSZ but has not been included previously in analysis of impedance data. The new equivalent circuit that is proposed should allow better separation of bulk and grain boundary impedances of YSZ ceramics. Yttria-stabilized zirconia (YSZ) is a very well-known oxide ion conductor that is used as the solid electrolyte in solid oxide fuel cells and oxygen gas sensors.1-3 It usually takes the form of a high-density ceramic in which the bulk resistance in series with a grain boundary resistance gives the overall sample resistance. 4 In almost all cases, the grain boundary resistance is present and cannot be eliminated readily by attention to ceramic processing conditions. The nature of the grain boundary impedance is often unclear, although significant compositional differences from the bulk, associated with dopant segregation, may be involved. 5,6 In order to measure sample impedances, sample-electrode contacts are necessary and therefore, appropriate consideration of their associated impedances forms part of the overall impedance analysis. For YSZ, contact impedances include contributions from the blocking of oxide ions at the sample-electrode interface, charge transfer resistances associated with the O 2− /O 2 redox couple and the diffusion of O 2 molecules between the surrounding atmosphere and the sampleelectrode interface. Usually, electrode contact impedances are wellseparated on a frequency scale from bulk/grain boundary impedances because they have much higher associated capacitances, C: typically (1-10) × 10 −6 F for the electrode contact compared with ∼ 1 × 10 −10 F for a grain boundary capacitance and (2-3) × 10 −12 F for a bulk capacitance. Relaxation frequencies, ω, are given ideally by ωτ = 1, where τ = RC and therefore, the frequency maxima of impedance semicircles, arcs or peaks associated with bulk/grain boundary impedances are usuall...

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“…In all cases, the center of the semicircles do not lie on the real axis ( Z ′), necessitating the use of a constant phase element (CPE) in place of a capacitor. The use of such a CPE has been shown previously to be appropriate to account for non‐ideal responses in electroceramics . The IBLC model equivalent circuit is shown in the inset of Figure A.…”

Section: Resultsmentioning

confidence: 99%

“…The use of such a CPE has been shown previously to be appropriate to account for non-ideal responses in electroceramics. [35][36][37][38] The IBLC model equivalent circuit is shown in the inset of Figure 5A. The fitting results show that R gb is always much higher than R g ; therefore, it is appropriate to consider that our ceramics consisted of insulating grain boundaries and semiconducting grains and that the large permittivity of Figure 5D.…”

Section: Resultsmentioning

confidence: 99%

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics

Peng

Liang

et al. 2019

J Am Ceram Soc

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Dielectric materials with ultrahigh permittivity are attracting attention due to the increasing demand for these types of materials for microelectronics and energy storage applications. In this work, we successfully synthesized Zn‐doped CdCu3Ti4O12 (CdCTO) ceramics with low dielectric loss and large permittivity via an ordinary mixed‐oxide technique. Remarkably, at a Zn doping level of 0.10, a CdCu2.9Zn0.1Ti4O12 ceramic exhibited both decreased dielectric loss tangent of ~0.058 and large dielectric permittivity > 4.0 × 104, as well as a good frequency stability over a wide frequency range from 40 Hz to 106 Hz. The high dielectric performance was attributed to the enhanced grain boundary resistance and internal barrier layer capacitor (IBLC) effect due to the fine and uniform grains that formed upon Zn doping. The findings reported in this work provide valuable insights into how to simultaneously realize a low dielectric loss and high permittivity in CdCTO and other related dielectric ceramics.

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Dipolar relaxation and impedance of an yttria-stabilised zirconia ceramic electrolyte

Abstract: Abstract

Cited by 18 publications

References 26 publications

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Electrical Properties of Yttria-Stabilized Zirconia, YSZ Single Crystal: Local AC and Long Range DC Conduction

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics

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Dipolar relaxation and impedance of an yttria-stabilised zirconia ceramic electrolyte

Abstract: Abstract

Cited by 18 publications

References 26 publications

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Electrical properties of bismuth ferrites: Bi2Fe4O9 and Bi25FeO39

Electrical Properties of Yttria-Stabilized Zirconia, YSZ Single Crystal: Local AC and Long Range DC Conduction

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu3Ti4O12 ceramics

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Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu₃Ti₄O₁₂ ceramics