A high rate anisotropic etching process, suitable for plasma etching one wafer at a time, is discussed. Results indicate that the etch rate is overridingly dependent on the
Cl2
concentration and is independent of the rf power used to drive the discharge. Several additives are used to control the etching process.
BCl3
is added to initiate etching, and
CHCl3
is included to control the anisotropy. Large amounts of He assist photoresist preservation. Parametric studies supporting the roles of the additives have been made.
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