1994
DOI: 10.1016/0039-6028(94)91174-6
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The effect of sputter temperature on vacancy island behavior on Ni(111) measured by photoemission of adsorbed xenon

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Cited by 4 publications
(4 citation statements)
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“…We suspect, however, that this value is at best an upper limit, since a background pressure of 3 × 10 -5 Torr may not lead to a saturation coverage of Xe. It is difficult to convert the area ratios into relative site concentrations, since prior research has shown that there need not be a 1:1 correspondence between Xe adsorption and site concentration. , Every defect or sulfur-deficient site, for example, may bind more Xe than does the site responsible for the −670 eV Xe feature. On the basis of the relative areas of the Xe 3d 5/2 features, however, we infer that this latter site is more abundant than the defect site.…”
Section: Discussionmentioning
confidence: 99%
“…We suspect, however, that this value is at best an upper limit, since a background pressure of 3 × 10 -5 Torr may not lead to a saturation coverage of Xe. It is difficult to convert the area ratios into relative site concentrations, since prior research has shown that there need not be a 1:1 correspondence between Xe adsorption and site concentration. , Every defect or sulfur-deficient site, for example, may bind more Xe than does the site responsible for the −670 eV Xe feature. On the basis of the relative areas of the Xe 3d 5/2 features, however, we infer that this latter site is more abundant than the defect site.…”
Section: Discussionmentioning
confidence: 99%
“…1). This is only an estimate, because saturation may not of been achieved under our experi-mental conditions, and the amount of Xe that adsorbs on a given defect site need not be equal to the amount of Xe that adsorbs on a stoichiometric surface site (Malafsky 1994).…”
Section: Thermal Chemistry Of H 2 O On Fes 2 (100)mentioning
confidence: 95%
“…8). As stated above, prior research also has shown the difficulties in obtaining site concentrations through the use of PAX (Malafsky 1994).…”
Section: Thermal Chemistry Of H 2 S On Fes 2 (100)mentioning
confidence: 99%
“…Monolayer vacancy islands have been generated on a variety of transition metal surfaces. , The appropriate temperatures for preparing different sizes of vacancy islands will scale with the substrate melting temperature since the preparation process involves a tradeoff between the efficiency of atom removal by sputtering and the rate of substrate atom diffusion on the surface. As described in detail by Michely et al, the 3-fold symmetrical shape of the vacancy islands (e.g., Figure ) is the result of 3-fold symmetry of the Pt(111) substrate.…”
Section: Resultsmentioning
confidence: 99%