Human cytomegalovirus (CMV), a herpesvirus that causes congenital disease and opportunistic infections in immunocompromised individuals, encodes functions that facilitate efficient viral propagation by altering host cell behavior. Here we show that CMV blocks apoptosis mediated by death receptors and encodes a mitochondria-localized inhibitor of apoptosis, denoted vMIA, capable of suppressing apoptosis induced by diverse stimuli. vMIA, a product of the viral UL37 gene, inhibits Fas-mediated apoptosis at a point downstream of caspase-8 activation and Bid cleavage but upstream of cytochrome c release, while residing in mitochondria and associating with adenine nucleotide translocator. These functional properties resemble those ascribed to Bcl-2; however, the absence of sequence similarity to Bcl-2 or any other known cell death suppressors suggests that vMIA defines a previously undescribed class of anti-apoptotic proteins.

β-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process and the floating zone process. Semiconductor substrates containing no twin boundaries with sizes up to 4 in. in diameter were fabricated. It was found that Si was the main residual impurity in the EFG-grown crystals and that the effective donor concentration (N d − N a) of unintentionally doped crystals was governed by the Si concentration. Intentional n-type doping was shown to be possible. An etch pit observation revealed that the dislocation density was on the order of 103 cm−3. N d − N a for the samples annealed in nitrogen ambient was almost the same as the Si concentration, while for the samples annealed in oxygen ambient, it was around 1 × 1017 cm−3 and independent of the Si concentration.

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.