High‐power pure blue laser diodes

Ohta, Mitsuo; Ohizumi, Y.; Hoshina, Yukio; Tanaka, Toshiki; Yabuki, Yoshifumi; Funato, Kazuo; Tomiya, Shigetaka; Goto, Shu; Ikeda, Masao

doi:10.1002/pssa.200674748

Cited by 34 publications

(17 citation statements)

References 4 publications

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“…1 Introduction The recent advancements in Gallium Nitride technology and the optimization of the growth procedures have leaded to significant improvements in the characteristics of InGaN-based laser diodes [1]. These devices are optimized for emission in the blue-violet spectral range, and represent the core-devices for the next-generation of optical data recording systems.…”

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confidence: 99%

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Analysis of the role of current in the degradation of InGaN‐based laser diodes

Meneghini

Trivellin

Meneghesso

et al. 2009

Phys. Status Solidi (c)

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This paper presents an analysis of the role of current in the long‐term degradation of InGaN‐based laser diodes (LDs). The analysis has been carried out by means of a wide set of stress tests under different driving conditions. During stress, the optical and electrical characteristics of the samples have been continuously monitored, with the aim of determining the physical mechanisms responsible for degradation and the dependence of the degradation rate on the driving conditions. The results reported in this paper demonstrate that: (i) constant current stress determines the increase of the threshold current of the devices, that is well related to the decrease of the sub‐threshold emission; (ii) stress induces the increase of the reverse current of the devices, but does not affect their forward‐bias characteristics; (iii) degradation rate has an almost linear dependence on stress current level; (iv) degradation takes place also below lasing threshold and for very low stress current levels, i.e. with very limited optical field levels. The results described in this paper indicate that the degradation kinetics are mostly determined by the stress current level used during operation: optical field and temperature are thought to play only a minor role in determining the degradation rate. Furthermore, the strong correlation between the threshold current increase and the sub‐threshold emission decrease suggests that degradation can be ascribed to the increase of the non‐radiative recombination rate in the active region of the devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…These devices are optimized for emission in the blue-violet spectral range, and represent the core-devices for the next-generation of optical data recording systems. However, since these devices are designed to operate under high electrical power (up to 1 W) and current density (up to 10 kA/cm 2 ) levels [1], their reliability is still a critical issue.…”

mentioning

confidence: 99%

Analysis of the role of current in the degradation of InGaN‐based laser diodes

Meneghini

Trivellin

Meneghesso

et al. 2009

Phys. Status Solidi (c)

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“…Such substrates, after etching of GaAs, are 300 µm thick. They are lapped, polished and then used by Sony, Sharp or Nec Corps to produce blue LDs [11][12][13]. The main disadvantage of Sumitomo's method is that on the one GaAs wafer only one 300 µm thick GaN crystal can be prepared.…”

Section: Introductionmentioning

confidence: 99%

Bulk growth of gallium nitride: challenges and difficulties

Boćkowski¹

2007

Cryst. Res. Technol.

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The present status of the GaN bulk growth by High Pressure Solution (HPS) method and combination of HPS and Hydride Vapor Phase Epitaxy (HVPE) methods is reviewed. Up to now the spontaneous high pressure solution growth of GaN results in crystals having habit of hexagonal platelets of surface area of 3 cm 2 or needles with length up to 1 cm. Recently, the platelets and needles have been used as seeds for the HVPE growth. On the other hand, the LPE technique under pressure with pressure-grown GaN (hp-GaN), GaN/sapphire template, patterned GaN/sapphire template and free standing HVPE GaN as seeds has been examined and developed.

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“…Pure blue-green LDs are promising light sources for mobile full color laser projection display [1]. Although green lasers based on second harmonic generation technologies are already available, semiconductor LDs have advantages in size, stability and efficiency.…”

Section: Introductionmentioning

confidence: 99%

Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa

Satter

Yoder

2010

Numerical Simulation of Optoelectronic Devices

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Shallow etch depths may contribute to a reduction in the optical gain of MQW lasers through the lateral diffusion of carriers away from the region of greatest optical intensity. Deeply etched mesas can prevent this lateral diffusion, but may themselves contribute to a degradation of optical gain if the sidewalls are not effectively passivated. Simulation results considering the effects of surface recombination velocity (SRV) at the edge of the etched active layers indicate that SRV must be reduced below approximately 10 5 cm/s in order for deep etch designs to provide benefit. Very few experimental studies quantify the efficiency of GaN surface passivation in terms of SRV. Further experimental studies are required to better assess the viability of deep etch MQW laser designs.

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High‐power pure blue laser diodes

Cited by 34 publications

References 4 publications

Analysis of the role of current in the degradation of InGaN‐based laser diodes

Analysis of the role of current in the degradation of InGaN‐based laser diodes

Bulk growth of gallium nitride: challenges and difficulties

Lateral carrier confinement and threshold current reduction in GaN QW lasers with deeply etched mesa

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