Bulk growth of gallium nitride: challenges and difficulties

Boćkowski, Michał

doi:10.1002/crat.200711002

Cited by 25 publications

(12 citation statements)

References 51 publications

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“…1 The ammonothermal method is regarded as one of the most feasible methods to grow high quality bulk GaN crystals, due to its scalability and high efficiency. [2][3][4] GaN crystals grown by the basic ammonothermal method contain a significant concentration of gallium vacancy-related defects (10 18 cm…”

Section: à3mentioning

confidence: 99%

Infrared absorption of hydrogen-related defects in ammonothermal GaN

Suihkonen

Pimputkar

Speck

et al. 2016

Applied Physics Letters

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Polarization controlled Fourier transform infrared (FTIR) absorption measurements were performed on a high quality m-plane ammonothermal GaN crystal grown using basic chemistry. The polarization dependence of characteristic absorption peaks of hydrogen-related defects at 3000–3500 cm−1 was used to identify and determine the bond orientation of hydrogenated defect complexes in the GaN lattice. Majority of hydrogen was found to be bonded in gallium vacancy complexes decorated with one to three hydrogen atoms (VGa-H1,2,3) but also hydrogenated oxygen defect complexes, hydrogen in bond-center sites, and lattice direction independent absorption were observed. Absorption peak intensity was used to determine a total hydrogenated VGa density of approximately 4 × 1018 cm−3, with main contribution from VGa-H1,2. Also, a significant concentration of electrically passive VGa-H3 was detected. The high density of hydrogenated defects is expected to have a strong effect on the structural, optical, and electrical properties of ammonothermal GaN crystals.

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Section: à3mentioning

confidence: 99%

Infrared absorption of hydrogen-related defects in ammonothermal GaN

Suihkonen

Pimputkar

Speck

et al. 2016

Applied Physics Letters

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“…GaN is one of the most promising semiconductor materials, which has attractive properties such as large direct band gap, high thermal stability and high electron velocities [1]. It has been used for fabrication optoelectronic and electronic device such as highbrightness UV, blue and green light emitting diodes (LEDs), blue laser diodes (LDs).…”

Section: Introductionmentioning

confidence: 99%

Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth

Zhang

Shao

et al. 2011

Journal of Crystal Growth

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“…In this field, free-standing, bulk substrates of these materials are considered critically important for realizing commercially viable devices. So, bulk III-Nitride substrates can offer a way to achieve lower dislocation densities in these devices when compared to heteroepitaxial growth approaches [2]. Dislocations in GaN, for instance, have been shown to impact the light emission from LEDs [3] and the lifetime in laser diodes [4].…”

Section: Introductionmentioning

confidence: 99%