2009
DOI: 10.1002/pssc.200880843
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Analysis of the role of current in the degradation of InGaN‐based laser diodes

Abstract: This paper presents an analysis of the role of current in the long‐term degradation of InGaN‐based laser diodes (LDs). The analysis has been carried out by means of a wide set of stress tests under different driving conditions. During stress, the optical and electrical characteristics of the samples have been continuously monitored, with the aim of determining the physical mechanisms responsible for degradation and the dependence of the degradation rate on the driving conditions. The results reported in this p… Show more

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Cited by 3 publications
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“…2. This result is consistent with the findings of other groups 16) and suggests electrodiffusion as one of the mechanisms responsible for LD degradation. For the PA MBE-grown devices, we observed little or no dependence of V d_OP on the current, at a constant junction temperature (Fig.…”
supporting
confidence: 93%
“…2. This result is consistent with the findings of other groups 16) and suggests electrodiffusion as one of the mechanisms responsible for LD degradation. For the PA MBE-grown devices, we observed little or no dependence of V d_OP on the current, at a constant junction temperature (Fig.…”
supporting
confidence: 93%