Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

Zhang, Z.W.; Zhu, Changsheng; Fong, W.K.; Leung, Kam Lun; Chan, Paddy K. L.; Surya, C.

doi:10.1016/j.sse.2011.02.007

Cited by 5 publications

(1 citation statement)

References 24 publications

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“…In this case, as the input pulse amplitude increases, the power dissipated in the gap increases too, and thus the time of heating reduces. Similar results for VO2-based switching structures have been obtained in the works, 28,30,31 though non-thermal electronic effects might also contribute to the switching dynamics [32][33][34] in high electric fields, e.g. in sandwich devices or planar devices with nano-sized inter-electron gaps.…”

Section: Current (A)supporting

confidence: 81%

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks

Velichko

Belyaev

Putrolaynen

et al. 2017

Int. J. Mod. Phys. B

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In the present paper, we report on the switching dynamics of both single and coupled VO2-based oscillators, with resistive and capacitive coupling, and explore the capability of their application in oscillatory neural networks. Based on these results, we further select an adequate SPICE model to describe the modes of operation of coupled oscillator circuits. Physical mechanisms influencing the time of forward and reverse electrical switching, that determine the applicability limits of the proposed model, are identified. For the resistive coupling, it is shown that synchronization takes place at a certain value of the coupling resistance, though it is unstable and a synchronization failure occurs periodically. For the capacitive coupling, two synchronization modes, with weak and strong coupling, are found. The transition between these modes is accompanied by chaotic oscillations. A decrease in the width of the spectrum harmonics in the weak-coupling mode, and its increase in the strongcoupling one, is detected. The dependences of frequencies and phase differences of the coupled oscillatory circuits on the coupling capacitance are found. Examples of operation of coupled VO2 oscillators as a central pattern generator are demonstrated.

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Section: Current (A)supporting

confidence: 81%

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks

Velichko

Belyaev

Putrolaynen

et al. 2017

Int. J. Mod. Phys. B

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Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

Zhou

Chen

et al. 2021

Solid-State Electronics

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Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

Glaab

Ploch

Kelz

et al. 2015

Journal of Applied Physics

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The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm2, 150 A/cm2, and 225 A/cm2. In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current.

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Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

Cited by 5 publications

References 24 publications

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks

Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

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Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

Cited by 5 publications

References 24 publications

Switching dynamics of single and coupled VO2-based oscillators as elements of neural networks

Switching dynamics of single and coupled VO2-based oscillators as elements of neural networks

Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures

Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

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Product

Resources

About

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks

Switching dynamics of single and coupled VO₂-based oscillators as elements of neural networks