High-power 1.3-µm InGaAsP P-substrate buried crescent lasers

Sakakibara, Yasushi; Higuchi, H.; Oomura, E.; Nakajima, Yasuo; Yamamoto, Yuta; Goto, Kenya; Namizaki, H.; Ikeda, Kenji; Susaki, W.

doi:10.1109/jlt.1985.1074329

Cited by 36 publications

(7 citation statements)

References 14 publications

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“…Each uses a buried crescent structure and InGaAsP for 1300 nm light emission [18]. Both are " m e n d e d for single mode fiber data transfer with rise and fall times of 300 ps.…”

Section: Component Selectionmentioning

confidence: 99%

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Marshall

Dale

Burke

1992

IEEE Trans. Nucl. Sci.

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especially well suited for orbital applications, The results of the first orbital fiber transmission experiments aboard the We report energydependent proton and Cod0 test LDEF satellite have recently been reported [l]. Also, NASA results and analysis assessing performance of In,,,Gao,,As has space qualified the MIL-STD-1773 1 megabit per second photodetectors and In,, ,,Ga, BAso 6,Po 39 laser diodes for WPS) fiber based data bus [21 which is designed P r i m l y satellite applications. Displacement damage degradation in for telemetry and control applications. Radiation tests have calculations of the nonionizing energy loss (NIEL) for m~s f u l l y on board *e solar malou lo us and technique for evaluating displacement damage in orbit. For the first time, data are presented confirming the proton energy dependence of NIEL in a 111-V material over the effects in optmlectronic devices due to total dose and ionization transients. the Inphotdemor is interpreted using DLTS. New been reported on this system 131, and it is menfly operating protons in Inallow damage assessment using a general Magnetosphefic Particle Explorer ( S M E W satellite launched On "y 1992. Past emphasis on radiation effects in optoelectronic environments with displacement damage from neutrons and photocurrent transients being key concerns. Several studies [4-71 have addressed these effects in GaAs LED sources andSi and GaAs photodetectors for application at the 850 nm wavelength. Some attention has also been given to injection laser diode response at that same wavelength, but the LED was emphasized in those studies due to its simplicity and superior reliability.energy range of interest for spacecraft. we also discuss devices have focused on survivability in weapo~ls

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“…Each uses a buried crescent structure and InGaAsP for 1300 nm light emission [18]. Both are " m e n d e d for single mode fiber data transfer with rise and fall times of 300 ps.…”

Section: Component Selectionmentioning

confidence: 99%

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Marshall

Dale

Burke

1992

IEEE Trans. Nucl. Sci.

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“…It is known that, from the technological point of view, the output optical power of a laser and its limiting characteristics are determined by the structure of the chip. Based on these criteria, the most suitable laser heterostructures are a buried crescent laser structure [2] and a buried multiple quantum well laser structure [3]. The major challenge in designing such laser het erostructures is to optimize their geometric, electrical, and optical parameters (composition, doping level, material and geometry of the semi insulator, thick nesses of layers, optical gain, optical limiting coeffi cient, number of quantum wells, V groove width, chip length and width, and others), which typically have opposite effects on each other.…”

Section: Introductionmentioning

confidence: 99%

High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

Васильев

Изотов

et al. 2014

Inorg Mater

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As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310 nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of the laser emitters at temperatures of up to 120°C, and present their power-current and spectral characteris tics.

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“…Conventional buried crescent lasers are attractive as light sources for optical fiber communication systems because of their high output power, low threshold current and good reliability. 1) However, their small-signal modulation bandwidth is rather limited due to excess parasitic capacitance from the current blocking reverse-biased p-n junction. In order to improve the modulation bandwidth, various structures, therefore, have been developed, such as polyimide-based semi-insulating planar buried heterostructures, 2,3) InGaAsP buried crescent injection lasers with semi-insulating current blocking layers, [4][5][6] V-grooved inner-stripe lasers with semi-insulating current confinement structure on p-InP substrate, 7) and so on.…”

Section: Introductionmentioning

confidence: 99%

High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions

Zhang¹,

Yi²,

Song³

et al. 1999

Jpn. J. Appl. Phys.

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High-speed and high-power InGaAsP/InP selective proton-bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. The defect of proton bombardment can not affect the lifetime of the SPB-BC laser because the optical field attenuation region obstructs the growth and propagation of defects. A CW light output over 115 mW was achieved at room temperature using a 500 µm long cavity SPB-BC laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5 × 10 5 h. The capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating Fe-InP structure.

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High-power 1.3-µm InGaAsP P-substrate buried crescent lasers

Cited by 36 publications

References 14 publications

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions

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