High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions

Abstract

High-speed and high-power InGaAsP/InP selective proton-bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. The defect of proton bombardment can not affect the lifetime of the SPB-BC laser because the optical field attenuation region obstructs the growth and propagation of defects. A CW light output over 115 mW was achieved at room temperature using a 500 µm long cavity SPB-BC laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5 × 10 5 h. The capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating Fe-InP structure.