Radiation Defect Engineering

In situanalysis of the carrier lifetime in silicon during implantation of 1.5 MeV protons

“…Ion implantation is a common technology to modify properties of material and device structures [1][2][3] as well as to introduce fast recombination centres [4]. However, the creation of detrimental defects is inevitable when radiation technologies are exploited.…”

Modeling of the interfacial interaction of nickel with silicon carbide under proton irradiation

“…This occurs despite the rate of point defect generation being substantially higher in mode (B). The observed effect can be accounted for by the larger distance, in mode (C), of the maximum defect generation zone from the surface, which is an effective drain for mobile point defects (R p >> h) with a real effective diffusion length of $100 nm [25]. The results confirm the predominantly diffusion mechanism of metal penetration into the semiconductor, because in the case of the implantation mechanism, the maximum values of penetration into SiC of Ni atoms with an average energy of $100 eV, gained from incident protons, would have been observed in mode (B) [25].…”

“…In [23][24][25][26][27], another scheme of ion-beam treatment of a metalsemiconductor contact was suggested and implemented. These experiments used implantation protons at an elevated temperature.…”

Irradiation and annealing of p-type silicon carbide

“…The experimentally obtained dependences of N a -N d and free carrier concentration on the irradiation dose are shown in figure 1. These dependences can be used to estimate the carrier removal rate V d by the known formula [1,2], used at low degrees of compensation of the samples:…”

“…In proton irradiation ("protonation"), particular progress has been achieved for GaAs-based devices [1]. This is due, first, to the specific features of the introduced radiation defects (RDs) and, second, to the 40-years experience in studies of RDs in GaAs.…”