No abstract

No abstract

In this letter, a normally-off GaN recessed-gate MOSFET is demonstrated using a nonplasma gate recess technique, in which the access region with AlGaN/GaN heterostructure was selectively grown on a semi-insulating GaN/Si template to naturally form a recessed gate. The normally-off recessed-gate Al2O3/GaN MOSFET presents a high threshold voltage of 3.5 V and a maximum drain current density of 550 mA/mm (at a positive gate bias of 12 V). A maximum field-effect mobility of 170 cm2 V−1 s−1 and a large on/off current ratio of more than 107 was obtained, which indicates the high quality of the Al2O3/GaN interface.

No abstract

In this letter, a method of using selective area growth (SAG) technique was proposed to fabricate the enhancement-mode (E-mode) AlGaN/GaN heterostructure field effect transistors (HFETs), which can effectively avoid the plasma treatment damage to the active region of HFETs in comparison with the conventional methods. The SAG-HFETs exhibited a good performance of the maximum drain current of 300 mA/mm and peak transconductance of 135 mS/mm with a larger positive threshold voltage of 0.4 V. The results indicate that the SAG technique is a promising method to realize the high performance E-mode GaN based HFETs.