Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

Козлов, В. А.; Kozlovski, V. V.

doi:10.1134/1.1385708

Cited by 71 publications

(38 citation statements)

References 82 publications

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“…The linear extrapolation to the applied dose of 8.1 × 10 12 cm -2 yields the value of 0.37 cm, which well coincides with value yielded from the linear extrapolation of the energydependence recommended in the literature for the depth of proton penetration in silicon [15].…”

Section: Results and Theorizingsupporting

confidence: 68%

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Pagava¹,

Chkhartishvili²

2017

Nano Res Appl

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Temperature dependencies of charge carrier Hall concentration and Hall mobility are systematically studied within the range 77 to 300 K for both n-and p-type silicon crystalline samples irradiated with high energy protons or electrons and annealed at temperatures up to 380°C and 600°C, respectively. In some cases, measured at a fixed temperature hall mobilities are found to be significantly lower or significantly higher than those in non-irradiated material. These results are interpreted on the basis of assumption that secondary radiation defects in silicon form clusters with conductivity significantly different from that of the surrounding matrix. A phenomenological theory, recently introduced by authors, explains apparent Hall mobility minima revealed on the temperature-dependence curves. Clusters themselves should possess high conductivity (be "metallic"), but in certain conditions they effectively act as ("dielectric") clusters with low conductivity, because they can be screened by the shells consisting of defects capturing charge carriers.

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Section: Results and Theorizingsupporting

confidence: 68%

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Pagava¹,

Chkhartishvili²

2017

Nano Res Appl

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“…Such regions consist of ''tracks" with a nucleus, having a density 10% lower than the density of the surrounding Si matrix. The main defect in implanted Si crystals which causes an increase in the base region resistance and the leakage currents of diodes is thought to be the divacancy [3,16,17]. It should be noted, however, that according to results reported in Refs.…”

Section: Introductionmentioning

confidence: 91%

“…The influence of irradiation with protons and ions on these parameters is quite well studied (see, e.g., Refs. [3,[8][9][10]17,22,23] and references therein). Capacitance of the implanted diodes (particularly, capacitance of a pn junction) has rarely been a subject of a separate research because of various reasons.…”

Section: Introductionmentioning

confidence: 96%

“…Doping with gold and with platinum [1] or irradiation with crays, electrons, protons or alpha particles [1][2][3] is widely used in technology of production of fast or step recovery Si-based diodes and transistors for decreasing lifetime of nonequilibrium holes and/or electrons and, thus, adjusting speed characteristics of the devices. Irradiation with protons [4] or alpha particles [5][6][7] results in the formation of layers with a high content of irradiation-induced defects in the base region.…”

Section: Introductionmentioning

confidence: 99%

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Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

Poklonski¹,

Горбачук²,

Shpakovski³

et al. 2010

Microelectronics Reliability

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“…Irradiation with protons or alpha rays enables formation of layers with the increased irradiation-induced defect content, which is used in the fabrication of fast recovery diodes [1][2][3][4][5][6]. In this case the irradiation fluences are usually larger than 10 11 cm −2 .…”

Section: Introductionmentioning

confidence: 99%

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p⁺n-Diodes

et al. 2011

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The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p + -region of diodes (energy 107 MeV, fluence Φ from 5 × 10 7 to 4 × 10 9 cm −2 ). It is shown that recovery charge Qrr is inversely proportional to the square root of the irradiation fluence value Φ. When the fluence increases, the part of the recovery charge QrrA, due to the high reverse conductance phase, decreases faster than the value Qrr.

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Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

Cited by 71 publications

References 82 publications

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p⁺n-Diodes

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Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

Cited by 71 publications

References 82 publications

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Radiation Defects Nano-Scale Inhomogeneous Distribution Influence on Apparent Hall Mobility in Silicon

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p+n-Diodes

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Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p⁺n-Diodes