Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p⁺n-Diodes

Abstract

The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the p + -region of diodes (energy 107 MeV, fluence Φ from 5 × 10 7 to 4 × 10 9 cm −2 ). It is shown that recovery charge Qrr is inversely proportional to the square root of the irradiation fluence value Φ. When the fluence increases, the part of the recovery charge QrrA, due to the high reverse conductance phase, decreases faster than the value Qrr.