High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

Abstract

As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310 nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of the laser emitters at temperatures of up to 120°C, and present their power-current and spectral characteris tics.