High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors

Abstract

Rational design of two-dimensional tin selenide (SnSe) nanostructures enables high-performance field emission for developing nanoscale vacuum transistors.

Enhanced Field Emission Properties of Au/SnSe Nano-heterostructure: A Combined Experimental and Theoretical Investigation

“…Single crystals of SnSe have also been explored for thermoelectric applications and found to exhibit high figure of merit (ZT) value of 2.6 24,25 . Very recently, a significantly enhanced field emission characteristics was demonstrated for SnSe nanoflowers through structural and surface morphologies modifications 26 . In the present work, atomically smooth NSs of SnSe have been synthesized chemically and the field emission properties of the SnSe NSs and Au/SnSe nano-heterostructures was systematically characterized.…”

A nanoscale vacuum field emission gated diode with an umbrella cathode

“…However, when the device is considered as a diode, the observed anode current and its dependence on the anode voltage are as expected. [9][10][11][12][13] Comparing the diode curve at V g =10 V, the diode turn-on voltage is reduced by approximately 400 mV from V g = 20 V. Such diode turn-on voltage modulation by gate voltage could be useful when fine-tuning is necessary in order to compensate any process and temperature induced variability.…”

“…[1][2][3][4][5] The nanoscale vacuum field emission transistors (VFETs) have been used for the construction of circuit elements including inverters 6 and adders 7 for various applications, and even complementary device operation has been proposed for the first time in vacuum electronics to enable low power logic circuits. 8 There have been a large number of studies 4,[9][10][11][12][13] focusing on vacuum diodes with nanoscale gaps as these are easier to fabricate and provide a preliminary understanding of the emission characteristics prior to undertaking complex VFET fabrication. Besides having their own applications, vacuum diodes can be used to optimize several important design, operation and reliability criteria such as channel gap vs. anode current, impact of material quality on field emission, emission uniformity over the cathode area and many other factors with minimal fabrication efforts.…”

Анализ Эмиссии Электронов С Одиночного Кремниевого Катода В Квазивакуумную (Воздушную) Среду Методом Атомно-Силовой Микроскопии

“…одиночного катода. Данный факт может быть обусловлен изменением формы ( " вытягиванием" отдельных участ-ков) поверхности кремниевого эмиттера под действием сильного электрического поля в нанометровом зазоре, что наблюдалось ранее в [22] на расстояниях " катод−зонд" в несколько сотен нанометров. Подобный эффект может обусловливать искажение потенциального барьера на границе " кремний−вакуум", который зависит от радиуса кривизны поверхности кремниевого эмиттера [23,24] и, как следствие, изменение фактора β и величины автоэмиссионного тока, что может объяснять расхождение с экспериментом и что следует учитывать в процессе моделирования.…”