Improving the thermal management of small-scale devices requires developing materials with high thermal conductivities. The semiconductor boron arsenide (BAs) is an attractive target because of ab initio calculation indicating that single crystals have an ultrahigh thermal conductivity. We synthesized BAs single crystals without detectable defects and measured a room-temperature thermal conductivity of 1300 watts per meter-kelvin. Our spectroscopy study, in conjunction with atomistic theory, reveals that the distinctive band structure of BAs allows for very long phonon mean free paths and strong high-order anharmonicity through the four-phonon process. The single-crystal BAs has better thermal conductivity than other metals and semiconductors. Our study establishes BAs as a benchmark material for thermal management applications and exemplifies the power of combining experiments and ab initio theory in new materials discovery.
Two-dimensional van der Waals materials have shown novel fundamental properties and promise for wide applications. Here, we report for the first time an experimental demonstration of the in situ characterization and highly reversible control of the anisotropic thermal conductivity of black phosphorus. We develop a novel platform based on lithium ion batteries that integrates ultrafast optical spectroscopy and electrochemical control to investigate the interactions between lithium ions and the lattices of the black phosphorus electrode. We discover a strong dependence of the thermal conductivity on battery charge states (lithium concentrations) during the discharge/charge process. The thermal conductivity of black phosphorus is reversibly tunable over a wide range of 2.45-3.86, 62.67-85.80, and 21.66-27.58 W·m·K in the cross-plan, zigzag, and armchair directions, respectively. The modulation in thermal conductivity is attributed to phonon scattering introduced by the ionic intercalation in between the interspacing layers and shows anisotropic phonon scattering mechanism based on semiclassical model. At the fully discharged state (x ∼ 3 in LiP), a dramatic reduction of thermal conductivity by up to 6 times from that of the pristine crystal has been observed. This study provides a unique approach to explore the fundamental energy transport involving lattices and ions in the layered structures and may open up new opportunities in controlling energy transport based on novel operation mechanisms and the rational design of nanostructures.
Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of boron phosphide. The present study paves the way toward the establishment of a new framework, based on the phonon spectra-material structure relationship, for the rational design of high thermal conductivity materials and nano- to multiscale devices.
A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu Se thin film exhibits a power factor of 0.62 mW/(m K ) at 684 K on rigid Al O substrate and 0.46 mW/(m K ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu Se thin films (<0.1 mW/(m K )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements.
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