A nanoscale vacuum field emission gated diode with an umbrella cathode

Han, Jin−Woo; Seol, Myeong‐Lok; Meyyappan, M.

doi:10.1039/d1na00004g

Cited by 17 publications

(5 citation statements)

References 15 publications

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“…In addition, when V g > V a at the beginning of the test, electrons may be emitted from the cathode and anode simultaneously and collected at the gate. Last but not least, because the gate is located in the middle of the three electrodes, it will intercept the electrons transferred from the cathode to the anode [ 20 ]. In short, the structure and metal electrodes cause the crosstalk of electrons, thus weakening the modulation of the gate.…”

Section: Resultsmentioning

confidence: 99%

Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics

Han¹,

Li²,

Cai³

et al. 2023

Micromachines

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Nanoscale vacuum channel triodes realize the vacuum-like transmission of electrons in the atmosphere because the transmission distance is less than the mean free path of electrons in air. This new hybrid device is the deep integration of vacuum electronics technology, micro-nano electronics technology, and optoelectronic technology. It has the advantages of both vacuum and solid-state devices and is considered to be the next generation of vacuum electronic devices. In this work, vertical nanoscale vacuum channel diodes and triodes with edge emission were fabricated using advanced micro-nano processing technology. The device materials were all based on the vacuum electronics material system. The field emission characteristics of the devices were investigated. The diode continued emitting at a bias voltage from 0 to 50 V without failure, and the current variation under different vacuum degrees was better than 2.1%. The field emission characteristics of the devices were evaluated over a wide pressure range of between 10−7 Pa and 105 Pa, and the results could explain the vacuum-like behavior of the devices when operating in air. The current variation of the triode is better than 6.1% at Vg = 8 V and Va = 10 V.

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Section: Resultsmentioning

confidence: 99%

Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics

Han¹,

Li²,

Cai³

et al. 2023

Micromachines

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“…To reach even smaller time scales down to the attosecond range a short laser pulse controlled emission process can be used [13]. In addition, the vacuum transport of electrons may help overcome the limitations of todays' CMOS technology enabling higher clock speeds [14].…”

Section: Introductionmentioning

confidence: 99%

The “LED‐version” of the electron gun

Bachmann¹,

Düsberg²,

Pahlke³

et al. 2023

Vak Forsch Prax

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Summary We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV‐sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments.

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“…Recently, many studies on vacuum electronic devices were conducted, involving vacuum diodes and triodes [20][21][22], where the vacuum channel length was designed at the nanometer scale. Thus, these devices can operate in air without performance degradation.…”

Section: Introductionmentioning

confidence: 99%

“…As is known to all, a vacuum is the superior media for carrier transportation, as opposed to semiconductor materials, where electrons travel ballistically without being scattered by a lattice or captured by defects. Vacuum electronics are generally considered to be more suitable for harsh environments [20][21][22] or faster detecting [23] than solid-state electronics. The existing vacuum devices are used for photon detection [23] or signal modulation [24,25].…”

Section: Introductionmentioning

confidence: 99%

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

Shen

Wang

et al. 2022

Micromachines

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A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors.

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A nanoscale vacuum field emission gated diode with an umbrella cathode

Abstract: A nanoscale field emission vacuum channel gated diode structure is proposed and a tungsten cathode with an umbrella-like geometry and sharp vertical edge is fabricated. The edge of the suspended...

Cited by 17 publications

References 15 publications

Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics

Vertical Nanoscale Vacuum Channel Triodes Based on the Material System of Vacuum Electronics

The “LED‐version” of the electron gun

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

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