High Mobility MoS₂ Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer

Abstract

High-performance MoS transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.

Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

“…Two-dimensional (2D) layered semiconductors have shown great promise for future nanoelectronics due to their ultrathin body thickness, dangling-bond-free surface, and reasonably good carrier mobility. [1][2][3][4][5] Among the monoelemental 2D materials, black phosphorus (BP), also referred to as phosphorene, received significant attention for its atomic scale smoothness, widely tunable direct band gap (ranging from 0.3~0.39 eV for bulk to 1.5~2.0 eV for monolayer), and high hole mobility (10 2 -10 3 cm 2 V −1 s −1 ) at room temperature. [6][7][8] The BP fieldeffect transistors (FETs) exhibit an ON/OFF ratio about 10 5 and a hole mobility up to 10 3 cm 2 V −1 s −1 .…”

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

“…For example, MoS 2 undergoes a transition from an indirect to direct bandgap when the thickness is reduced to a monolayer (∼0.7 nm), which is accompanied by a dramatic enhancement of the photoluminescence (PL) efficiency and strong light-matter interactions367 due to the quantum confinement that occurs in layered d-electron materials8. These attractive features of monolayer TMDC make it a promising material for novel flexible and wearable optoelectronics91011 as well as novel electronic devices12131415. Accordingly, various monolayer MoS 2 -based photodetectors have been shown to exhibit outstanding optical properties with a high photoreponsivity161718192021.…”

“…However, the very large surface-to-volume ratio of the MoS 2 monolayer makes it particularly sensitive to the surrounding environment such as defects on the underlying substrates or physisorbed gas molecules, leading to electron trap sites that occur due to local potential fluctuations22232425. Therefore, charge trapping in photodetectors can play an important role in determining both the response times and the light intensity-dependent photoresponse1213. Recent studies on electrical memory devices26272829 have provided useful information about the modulation of the charge trapping density.…”

Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

“…We also used the Y ‐function method to evaluate the contact resistance of the MoS 2 2DVFETs. The contact resistance at the on‐state is ≈1.2–1.5 kΩ µm (Figure d; Figure S10, Supporting Information), which is comparable to that of a strategy such as hBN/Ni and hBN/Co for contact improvement. For comparison, the contact resistance for long‐channel devices with the channel transferred onto the prepatterned electrodes is over 30 kΩ µm (Figure S10, Supporting Information), which is similar to that of Ti/Au with an annealing strategy .…”