High-performance MoS transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.

Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO(1-x) and ZnO.

Copper-based materials are promising electrocatalysts for CO2 reduction. Prior studies show that the mixture of copper (I) and copper (0) at the catalyst surface enhances multi-carbon products from CO2 reduction; however, the stable presence of copper (I) remains the subject of debate. Here we report a copper on copper (I) composite that stabilizes copper (I) during CO2 reduction through the use of copper nitride as an underlying copper (I) species. We synthesize a copper-on-nitride catalyst that exhibits a Faradaic efficiency of 64 ± 2% for C2+ products. We achieve a 40-fold enhancement in the ratio of C2+ to the competing CH4 compared to the case of pure copper. We further show that the copper-on-nitride catalyst performs stable CO2 reduction over 30 h. Mechanistic studies suggest that the use of copper nitride contributes to reducing the CO dimerization energy barrier—a rate-limiting step in CO2 reduction to multi-carbon products.

The electroreduction of C1 feedgas to high-energy-density fuels provides an attractive avenue to the storage of renewable electricity. Much progress has been made to improve selectivity to C1 and C2 products, however, the selectivity to desirable high-energy-density C3 products remains relatively low. We reason that C3 electrosynthesis relies on a higher-order reaction pathway that requires the formation of multiple carbon-carbon (C-C) bonds, and thus pursue a strategy explicitly designed to couple C2 with C1 intermediates. We develop an approach wherein neighboring copper atoms having distinct electronic structures interact with two adsorbates to catalyze an asymmetric reaction. We achieve a record n-propanol Faradaic efficiency (FE) of (33 ± 1)% with a conversion rate of (4.5 ± 0.1) mA cm−2, and a record n-propanol cathodic energy conversion efficiency (EEcathodic half-cell) of 21%. The FE and EEcathodic half-cell represent a 1.3× improvement relative to previously-published CO-to-n-propanol electroreduction reports.

A flexible ferroelectric memory element based on oxide heteroepitaxy has been demonstrated with superior performance.

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The first phase selection and the phase formation sequence between metal and silicon (Si) couples are indispensably significant to microelectronics. With increasing scaling of device dimension to nano regime, established thermodynamic and kinetic models in bulk and thin film fail to apply in 1-D nanostructures. Herein, we present an unique size-dependent first phase formation sequence in 1-D nanostructures, with Ni-Si as the model system. Interfacial-limited phase which forms the last in thin film, NiSi(2), appears as the dominant first phase at 300-800 °C due to the elimination of continuous grain boundaries in 1-D silicides. On the other hand, θ-Ni(2)Si, the most competitive diffusion-limited phase takes over NiSi(2) and wins out as the first phase in small diameter nanowires at 800 °C. Kinetic parameters extracted from in situ transmission electron microscope studies and a modified kinetic growth competition model quantitatively explain this observation. An estimated critical diameter from the model agrees reasonably well with observations.

SUMMARY Aims Brain ischemia activates astrocytes in a process known as astrogliosis. Although this process has beneficial effects, excessive astrogliosis can impair neuronal recovery. Polyinosinic–polycytidylic acid (Poly IC) has shown neuroprotection against cerebral ischemia–reperfusion injury, but whether it regulates reactive astrogliosis and glial scar formation is not clear. Methods We exposed cultured astrocytes to oxygen–glucose deprivation/reoxygenation (OGD/R) and used a rat middle cerebral artery occlusion (MCAO)/reperfusion model to investigate the effects of Poly IC. Astrocyte proliferation and proliferation-related molecules were evaluated by immunostaining and Western blotting. Neurological deficit scores, infarct volumes and neuroplasticity were evaluated in rats after transient MCAO. Results In vitro, Poly IC inhibited astrocyte proliferation, upregulated Toll-like receptor 3 (TLR3) expression, upregulated interferon-β, and downregulated interleukin-6 production. These changes were blocked by a neutralizing antibody against TLR3, suggesting that Poly IC function is TLR3-dependent. Moreover, in the MCAO model, Poly IC attenuated reactive astrogliosis, reduced brain infarction volume, and improved neurological function. In addition, Poly IC prevented MCAO-induced reductions in soma size, dendrite length, and number of dendritic bifurcations in cortical neurons of the infarct penumbra. Conclusions By ameliorating astrogliosis-related damage, Poly IC is a potential therapeutic agent for attenuating neuronal damage and promoting recovery after brain ischemia.