Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, SeungNam; Kim, Jong Min

doi:10.1038/ncomms14734

Cited by 201 publications

(158 citation statements)

References 43 publications

Supporting

Mentioning

155

Contrasting

Order By: Relevance

“…Two-dimensional (2D) materials are strategically important for optoelectronic applications due to their ultra-thin nature and tunable electrostatic and optical properties [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Local photodoping in monolayer MoS₂

Gadelha¹,

Cadore²,

Lafeta³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS 2 transistors locally. We claim that the photodoping fills the electronic states in MoS 2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS 2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS 2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface)is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS 2 transistors and the implementation of such an effect in integrated devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Local photodoping in monolayer MoS₂

Gadelha¹,

Cadore²,

Lafeta³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…In 2016, Lee et al reported an MoS 2 optoelectronic memory based on charge trapping and releasing in the interface of MoS 2 and SiO 2 . 53 A preferable on/off ratio (~3.1 × 10 3 ) and long retention (~10 4 s) were achieved. The mechanism can be easily understood with the assistance of Figure 5B.…”

Section: Optoelectronic Memory Based On 2d Materialsmentioning

confidence: 95%

“…Compared with Gr and CuIn 7 Se 11 , TDMCs seem more suitable as channel materials. In 2016, Lee et al reported an MoS 2 optoelectronic memory based on charge trapping and releasing in the interface of MoS 2 and SiO 2 . A preferable on/off ratio (~3.1 × 10 3 ) and long retention (~10 4 s) were achieved.…”

Section: Charge‐transport Memories Based On Two‐dimensional Materialsmentioning

confidence: 99%

Section: Charge‐transport Memories Based On Two‐dimensional Materialsmentioning

confidence: 99%

“…Reproduced with permission. 53 Copyright 2017, Nature Publishing Group both the footprint of a single RRAM cell and the integration density of the array are the key metrics. One of the most attractive advantages of RRAM in high-density applications is the simple crossbar structure with a 4F 2 feature size, which has the potential to form an extremely high-density array.…”

Section: High-speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

See 2 more Smart Citations

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

200

142

View full text Add to dashboard Cite

Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

show abstract

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet

Chu

Wang

Yin

et al. 2017

Adv Funct Materials

239

206

View full text Add to dashboard Cite

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar-blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS 3 nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few-layered 2D NiPS 3 nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10 12 Jones, outperforming some traditional widebandgap UV detectors. The wavelength-dependent photoresponsivity measurement allows the direct observation of an admirable cut-off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.

show abstract

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Cited by 201 publications

References 43 publications

Local photodoping in monolayer MoS₂

Local photodoping in monolayer MoS₂

Memory materials and devices: From concept to application

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet

Contact Info

Product

Resources

About

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Cited by 201 publications

References 43 publications

Local photodoping in monolayer MoS2

Local photodoping in monolayer MoS2

Memory materials and devices: From concept to application

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

Contact Info

Product

Resources

About

Local photodoping in monolayer MoS₂

Local photodoping in monolayer MoS₂

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS₃ Nanosheet