High hole mobility in physical vapour deposition-grown tellurium-based transistors

Abstract

Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complement the conventional semiconductors. Graphene has amazing mobility but suffers from zero bandgap. Subsequently, 2D transition-metal dichalcogenides benefit from their sizable bandgap while the mobility is limited. Recently, the 2D elemental materials such as the representative black phosphorus can combine the high mobility with moderate bandgap; however the air-stability is a challenge. Here, we report air-stable tellurium flakes and wires using the facile and scalable physical vapour deposition (PVD) method. The prototype field-effect transistors were fabricated to exhibit high hole mobility up to 1485 cm 2 V −1 s −1 at room temperature and 3500 cm 2 V −1 s −1 at low temperature (2 K). This work can attract numerous attentions on this new emerging 2D tellurium and open up a new way for exploring high-performance optoelectronics based on the PVD-grown p-type tellurium.

Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

“…Most reported Te devices have contact resistance values in the range of (1.5 ≈ 339) × 10 3 Ωμm, one to three orders of magnitude larger than the value in this work. [ 16,17,30–34 ] The low contact resistance in this work is a result of Pt contact with high work function and 2D Te with appropriate thickness.…”

“…Most reported Te devices have contact resistance values in the range of (1.5 ≈ 339) × 10 3 Ωµm, one to three orders of magnitude larger than the value in this work. [16,17,[30][31][32][33][34] The low contact resistance in this work is a result of Pt contact with high work function and 2D Te with appropriate thickness. The performance of devices based on 2D materials greatly relies on the electrode metals with different work functions for current injection.…”

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

“…Over the past decade, a vast number of publications reported diverse methods for synthesizing 2D materials, which include top-down fabrication (e.g., mechanical/liquid exfoliation and gold-mediated exfoliation , ), bottom-up synthesis methods (e.g., physical vapor deposition, solution phase synthesis methods, , chemical vapor deposition (CVD), atomic layer deposition, and molecular beam epitaxy , ), assembly strategies (e.g., floating-coffee-ring driven assembly and dynamic-template-assisted meniscus-guided coating , ), and others. , Figure compares these approaches with five qualitative parameters, including cost, quality, repeatability, scale, and ease of processing. Among these methods, mechanical exfoliation is reported to produce almost defect-free 2D materials with the highest quality. , However, the standard mechanical exfoliation process can only produce relatively small 2D flakes in a large amount of time. , To this end, researchers have tried to develop simple and effective ways of preparing large-area 2D materials with high quality. ,, Liquid phase exfoliation (LPE), one top-down technology similar to mechanical exfoliation, is used to obtain monolayer or few-layer nanomaterials from their bulk crystals.…”

“…Synthesis. Over the past decade, a vast number of publications reported diverse methods for synthesizing 2D materials, which include top-down fabrication (e.g., mechanical/liquid exfoliation 54 and gold-mediated exfoliation 84,164 ), bottom-up synthesis methods (e.g., physical vapor deposition, 165 solution phase synthesis methods, 166,167 chemical vapor deposition (CVD), 168 atomic layer deposition, 60 and molecular beam epitaxy 169,170 ), assembly strategies (e.g., floating-coffee-ring driven assembly 171 and dynamic-templateassisted meniscus-guided coating 163,172 ), and others. 160,173 Figure 3 compares these approaches with five qualitative parameters, including cost, quality, repeatability, scale, and ease of processing.…”

Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors

“…Despite the versatile synthesis techniques for Te, such as chemical vapor deposition ( Huang et al, 2021 ; Peng et al, 2021 ; Yang et al, 2022 ; Zhao et al, 2022 ), physical vapor deposition ( Wang et al, 2014 ; Tao et al, 2021 ), and molecular beam epitaxy ( Chen et al, 2017 ; Zheng W et al, 2021 ), the substrate-free solution approach offers distinct advantages of low temperature (<200°C) and scalability. It has been widely used to prepare monocrystal quasi-2D nanosheets with a lateral size of over 100 μm ( Yao et al, 2021a ).…”