Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

Lin, Ziyuan; Wang, Jingli; Chen, Jiewei; Liu, Jidong; Zhang, Wenjing; Chai, Yang

doi:10.1002/aelm.202200380

Cited by 6 publications

(3 citation statements)

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“…Raman characterization confirms that the residue after the thinning process is pure tellurene without other solid‐state products. The thinning process of tellurene under highly reductive potentials is similar to the thinning effect observed in previous observations of tellurene degradation under light illumination 58 . The degradation of tellurene at ~−0.6 V versus RHE can be attributed to the reduction of solid tellurene to soluble Te 2− , which happens at ~−0.67 V versus RHE according to the electrochemical studies of bulk tellurium 30‐32,59 …”

Section: Discussionsupporting

confidence: 85%

“…The thinning process of tellurene under highly reductive potentials is similar to the thinning effect observed in previous observations of tellurene degradation under light illumination. 58 The degradation of tellurene at ~−0.6 V versus RHE can be attributed to the reduction of solid tellurene to soluble Te 2− , which happens at ~−0.67 V versus RHE according to the electrochemical studies of bulk tellurium. [30][31][32]59 Finally, we further investigate the electrochemical stability of tellurene in the oxidation potential range.…”

Section: Electrochemical and In-situ Transport Measurements Of H-te A...mentioning

confidence: 99%

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Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

Wang

et al. 2023

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The remarkable successes of graphene have sparked increasing interest in elemental two‐dimensional (2D) materials, also referred to as Xenes. Due to their chemical simplicity and appealing physiochemical properties, Xenes have shown particular potential for numerous (opto) electronic, iontronic, and energy applications. Among them, layered α‐phase tellurene has demonstrated the most promise, thanks to the recent successes in the chemical synthesis of highly crystalline 2D tellurene. However, the general electronic and electrochemical properties of tellurene in electrolyte systems remain ambiguous, hindering their further development. In this work, we studied the electrostatic gating, electrocatalysis, and electrochemical stability of tellurene in electrolyte systems. Our results show that tellurene obtained from both hydrothermal and chemical vapor deposition methods, two mainstream synthetic approaches for Xenes, demonstrates thickness‐dependent ambipolar transport with high hole mobility and stability in both aqueous electrolytes and ionic liquids. More importantly, the electrochemical properties of tellurene are investigated via the emerging on‐chip electrochemistry. Pristine tellurene demonstrates hydrogen evolution reaction with low Tafel slopes and remarkable electrochemical stability in acidic electrolytes over a large potential window. Our study provides a comprehensive understanding of the iontronic and electrochemical properties of tellurene, paving the way for the broad adoption of Xenes in sensors, synaptic devices, and electrocatalysis.

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Section: Discussionsupporting

confidence: 85%

Section: Electrochemical and In-situ Transport Measurements Of H-te A...mentioning

confidence: 99%

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

Wang

et al. 2023

SmartMat

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“…8b, c) and mechanism analysis (Supplementary Note 4). Consistent with existing works based on solution-prepared Te, higher hole carrier density exists in the thicker Te samples 26,31,32 . For performance comparison, we used the 28 nm thick Te flake as the channel of charge-based FETs with ionic liquid.…”

Section: Room-temperature Volatile and Non-volatile Valley Transistorssupporting

confidence: 89%

Room-temperature valley transistors for low-power neuromorphic computing

et al. 2022

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Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.

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A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Zha,

Xia,

Shi

et al. 2023

Advanced Materials

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The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two‐dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p‐type Weyl semiconductor with many intriguing properties, tellurium has been widely used in advanced electronics/optoelectronics. However, its application in floating gate memory devices for information processing has never been explored. Herein, we report an electronic/optoelectronic floating gate memory device enabled by tellurium‐based 2D vdW heterostructure for multimodal reservoir computing. When subjected to intense electrical/optical stimuli, our device exhibits impressive nonvolatile electronic memory behaviors including ∼108 extinction ratio, ∼100‐ns switching speed, >4000 cycles, >4000‐s retention stability, and nonvolatile multi‐bit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, we demonstrate a multimodal reservoir computing system with high recognition accuracy of 90.77% for event‐type multimodal handwritten digit‐recognition.This article is protected by copyright. All rights reserved

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Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

Cited by 6 publications

References 50 publications

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

Iontronic and electrochemical investigations of 2D tellurene in aqueous electrolytes

Room-temperature valley transistors for low-power neuromorphic computing

A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

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