Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

Abstract

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

High-performance hierarchical O-SnS/I-ZnIn2S4 photodetectors by leveraging the synergy of optical regulation and band tailoring

“…Since the revolutionary preparation of one-atom-thick graphene, 2D layered materials (2DLMs) have been established as one of the most promising material platforms toward realizing the next-generation integrated electronics, photonics and optoelectronics, [1][2][3][4][5][6] by virtue of the intriguing attributes spanning high light transmittance, excellent flexibility, wide-range properties, remarkable quantum confinement, ultra-scaled Weak light absorption and limited carrier lifetime are critical obstacles inhibiting further improvement of 2D layered material (2DLM) photodetectors. Herein, hierarchical heterostructures built of 2DLMs, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been developed for photodetection.…”

“…Since the revolutionary preparation of one-atom-thick graphene, 2D layered materials (2DLMs) have been established as one of the most promising material platforms toward realizing the next-generation integrated electronics, photonics and optoelectronics, 1–6 by virtue of the intriguing attributes spanning high light transmittance, excellent flexibility, wide-range properties, remarkable quantum confinement, ultra-scaled channel limit, thickness/strain regulated physical attributes, flexible integratability, etc. Thus far, hundreds of 2DLMs spanning graphene, 7 transition metal dichalcogenides, 8–10 nitrides, 11 phosphides, 12 oxyhalides, 13 and Mxenes 14 have been developed for photodetection applications.…”

Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology

“…Therefore, there is still a pressing demand to explore alternative material systems. Benefiting from the strong light–matter coupling, thickness/strain/dielectric environment/external field-regulated electronic structures, magnificent in-plane carrier mobility at atomic-scale thickness, flexible integrability, strong immunity to short-channel effects, and outstanding flexibility, 2D layered materials (2DLMs) have been considered to be one of the most compelling candidate building blocks for implementing the next generation of electronic and optoelectronic industries, and these materials have attracted worldwide fundamental and engineering enthusiasm. − …”

Into the Unknown: How Computation Can Help Explore Uncharted Material Space

“…Often, optimization of device performance and material properties are completed as two separate tasks, necessitated by the complexity of this multivariable optimization problem. We refer the reader to reviews of device-level optimization for solar cells, 24 field-effect transistors, 25 thermoelectrics, 26 and batteries. 27 While screening bulk "idealized" materials may be useful to remove materials without suitable properties, screening only bulk material properties is unlikely to identify the best materials at a device level.…”