High-performance hierarchical O-SnS/I-ZnIn₂S₄ photodetectors by leveraging the synergy of optical regulation and band tailoring

Abstract

A hierarchical SnS/ZnIn2S4 heterostructure with optical regulation and band tailoring is developed for high-performance broadband integrated optoelectronics.

Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

“…Thus far, a number of 2DLMs, including graphene [15], glassy graphene [16], graphdiyne [17], chalcogenides [18][19][20][21][22][23][24][25], MXenes [26], nitrides [27], phosphides [28], metal phosphorus trichalcogenides [29], as well as related heterostructures [30][31][32][33][34][35][36][37][38][39][40], have been developed for photoelectric detection research, and these materials have manifested a variety of intriguing characteristics. For example, by exploiting low-symmetry SiP 2 nanoflake as the photosensitive channel, Wang et al [28] demonstrated a unique polarization-sensitive photodetector with a dichroic ratio of ~1.…”

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

“…[ 4–8 ] They have manifested a series of advantages including naturally‐passivated surface, thickness/strain/torsion‐regulated bandgap, excellent in‐plane carrier mobility, Si‐complementary metal‐oxide–semiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [ 9–13 ] nitrides, [ 14 ] phosphides, [ 15,16 ] transition metal dichalcogenides, [ 17–28 ] post transition metal chalcogenides, [ 29–35 ] transition metal halides, [ 36–38 ] solid solutions, [ 39 ] multi‐element compounds, [ 40–56 ] topological insulators, [ 57,58 ] alloys, [ 59 ] etc. Their bandgap values range from 0 up to 6 eV, theoretically enabling them to meet the diverse practical applications in various wavebands.…”

“…[4][5][6][7][8] They have manifested a series of advantages including naturally-passivated surface, thickness/strain/torsion-regulated bandgap, excellent in-plane carrier mobility, Si-complementary metal-oxidesemiconductor processing compatibility, outstanding flexibility, etc. Thus far, hundreds of 2DLMs have been explored including elemental semiconductors and their derivatives, [9][10][11][12][13] nitrides, [14] phosphides, [15,16] transition metal dichalcogenides, [17][18][19][20][21][22][23][24][25][26][27][28] post transition metal chalcogenides, [29][30][31][32][33][34][35] transition metal halides, [36][37][38] solid solutions, [39] multi-element compounds, [40][41][42][43][44][45][46][47][48][49][50]…”

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…), 1D vdWMs (e.g., selenium, 8 tellurium, 9 Sb 2 Se 3 , 10,11 Ta 2 Ni 3 Se 8 , 12 etc. ), and 2D vdWMs (e.g., black phosphorus, 13 MoS 2 , 14,15 WSe 2 , 15 Bi 2 O 2 Se, 16 ReSe 2 , 17 CrTe 2 , 18 Ge 4 Se 9 , 19 ZnIn 2 S 4 , 20 AgInP 2 S 6 , 21 etc.). Compared to 0D and 2D vdWMs, 1D vdWMs have manifested unique advantages in terms of electronic techniques.…”

“…), and 2D vdWMs ( e.g. , black phosphorus, 13 MoS 2 , 14,15 WSe 2 , 15 Bi 2 O 2 Se, 16 ReSe 2 , 17 CrTe 2 , 18 Ge 4 Se 9 , 19 ZnIn 2 S 4 , 20 AgInP 2 S 6 , 21 etc. ).…”